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Sökning: WFRF:(Parker B.) > (2010-2014) > Chalmers tekniska högskola

  • Resultat 1-4 av 4
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1.
  • Weinstein, John N., et al. (författare)
  • The cancer genome atlas pan-cancer analysis project
  • 2013
  • Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1546-1718 .- 1061-4036. ; 45:10, s. 1113-1120
  • Tidskriftsartikel (refereegranskat)abstract
    • The Cancer Genome Atlas (TCGA) Research Network has profiled and analyzed large numbers of human tumors to discover molecular aberrations at the DNA, RNA, protein and epigenetic levels. The resulting rich data provide a major opportunity to develop an integrated picture of commonalities, differences and emergent themes across tumor lineages. The Pan-Cancer initiative compares the first 12 tumor types profiled by TCGA. Analysis of the molecular aberrations and their functional roles across tumor types will teach us how to extend therapies effective in one cancer type to others with a similar genomic profile. © 2013 Nature America, Inc. All rights reserved.
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2.
  • Catto, P. J., et al. (författare)
  • Kinetic effects on a tokamak pedestal ion flow, ion heat transport and bootstrap current
  • 2013
  • Ingår i: Plasma Physics and Controlled Fusion. - : IOP Publishing. - 1361-6587 .- 0741-3335. ; 55:4
  • Tidskriftsartikel (refereegranskat)abstract
    • We consider the effects of a finite radial electric field on ion orbits in a subsonic pedestal. Using a procedure that makes a clear distinction between a transit average and a flux surface average we are able to solve the kinetic equation to retain the modifications due to finite E X B drift orbit departures from flux surfaces. Our approach properly determines the velocity space localized, as well as the nonlocal, portion of the ion distribution function in the banana and plateau regimes in the small aspect ratio limit. The rapid variation of the poloidal ion flow coefficient and the electrostatic potential in the total energy modify previous banana regime evaluations of the ion flow, the bootstrap current, and the radial ion heat flux in a subsonic pedestal. In the plateau regime, the rapid variation of the poloidal flow coefficient alters earlier results for the ion flow and bootstrap current, while leaving the ion heat flux unchanged since the rapid poloidal variation of the total energy was properly retained.
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3.
  • Christensen, M. A., et al. (författare)
  • Mixed valence radical cations and intermolecular complexes derived from indenofluorene-extended tetrathiafulvalenes
  • 2014
  • Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry (RSC). - 2050-7534 .- 2050-7526. ; 2:48, s. 10428-10438
  • Tidskriftsartikel (refereegranskat)abstract
    • Engineering of mixed-valence (MV) radical cations and intermolecular complexes based on pi-extended tetrathiafulvalenes (TTFs) is central for the development of organic conductors. On another front, redox-controlled dimerization of radical cations has recently been recognized as an important tool in supramolecular chemistry. Here we show that pi-extended TTFs based on the indenofluorene core, prepared by Horner-Wadsworth-Emmons reactions, undergo reversible and stepwise one-electron oxidations and that the detectable, intermediate radical cation forms remarkably strong intermolecular MV ([neutral.cation]) and pi-dimer ([cation.cation]) complexes with near-infrared radical cation absorptions. The radical cation itself seems to be a so-called Class III MV species in the Robin-Day classification. The formation of MV dimers was corroborated by ESR spectroelectrochemical studies, revealing two slightly different ESR signals upon oxidation, one assigned to the MV dimer and the other to the cation monomer. Crystals of the radical cation with different anions (PF6- , BF4-, and TaF6-) were grown by electrocrystallization. Conductance studies revealed that the salts behave as semiconductors with the hexafluorotantalate salt exhibiting the highest conductance. Using a custom-built ESR spectrometer with sub-femtomole sensitivity, the magnetic properties of one crystal were investigated. While the spin-to-spin interaction between radical cations was negligible, a high cooperativity coupling to the microwave field was observed - as a result of an exceptionally narrow spin line width and high spin density. This could have great potential for applications in quantum computation where crystalline spin ensembles are exploited for their long coherence times.
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4.
  • Fang, Z., et al. (författare)
  • Active memory controller
  • 2012
  • Ingår i: Journal of Supercomputing. - : Springer Science and Business Media LLC. - 1573-0484 .- 0920-8542. ; 62:1, s. 510-549
  • Tidskriftsartikel (refereegranskat)abstract
    • Inability to hide main memory latency has been increasingly limiting the performance of modern processors. The problem is worse in large-scale shared memory systems, where remote memory latencies are hundreds, and soon thousands, of processor cycles. To mitigate this problem, we propose an intelligent memory and cache coherence controller (AMC) that can execute Active Memory Operations (AMOs). AMOs are select operations sent to and executed on the home memory controller of data. AMOs can eliminate a significant number of coherence messages, minimize intranode and internode memory traffic, and create opportunities for parallelism. Our implementation of AMOs is cache-coherent and requires no changes to the processor core or DRAM chips. In this paper, we present the microarchitecture design of AMC, and the programming model of AMOs. We compare AMOs' performance to that of several other memory architectures on a variety of scientific and commercial benchmarks. Through simulation, we show that AMOs offer dramatic performance improvements for an important set of data-intensive operations, e.g., up to 50x faster barriers, 12x faster spinlocks, 8.5x-15x faster stream/array operations, and 3x faster database queries. We also present an analytical model that can predict the performance benefits of using AMOs with decent accuracy. The silicon cost required to support AMOs is less than 1% of the die area of a typical high performance processor, based on a standard cell implementation.
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  • Resultat 1-4 av 4

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