SwePub - sökning: WFRF:(Pavolotsky A.)

Numrering	Referens	Omslagsbild	Hitta
1.	Krause, Sascha, 1989, et al. (författare) Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications 2018 Ingår i: Journal of Micromechanics and Microengineering. - : IOP Publishing. - 1361-6439 .- 0960-1317. ; 28:10 Tidskriftsartikel (refereegranskat)abstract We demonstrate the suitability of employing suspended GaN beams on a Pi-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer (HEB) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.

Krause, Sascha, 1989, et al. (författare)
Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications
2018
Ingår i: Journal of Micromechanics and Microengineering. - : IOP Publishing. - 1361-6439 .- 0960-1317. ; 28:10
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the suitability of employing suspended GaN beams on a Pi-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer (HEB) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.

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