| 1. |
- Tomas, S. A., et al.
(författare)
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Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol-gel nanofilms
- 2005
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 36:3-6, s. 570-573
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties and the band structure of TiO2 sol-gel thin films prepared by the sot-gel process and doped with methylene blue or rhodamine were studied by absorption, excitation and emission spectroscopy. The absorption spectra show two absorption bands, around 2.3 eV and above 3.0 eV suggesting that besides the excitation bands observed in rhodamine at 2.3 eV an efficient energy transfer occurs between the TiO2 conduction band and the molecular rhodamine excited states, yielding a strong emission band at 600 nm, while for methylene blue a strong hypsochromic shift of the absorption bands is observed. The optical absorption and band gap energy for the phase rutile of TiO2 films were calculated with a LDA+U/FPLAPW method, and a comparison of this calculation with experimental data of TiO2 films prepared by undoped sol-gel and sputtering is performed.
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| 2. |
- Baroni, Mpma, et al.
(författare)
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Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
- 2006
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 37:4, s. 290-294
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Tidskriftsartikel (refereegranskat)abstract
- Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of pi-Si.
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| 3. |
- Da Silva, A. F., et al.
(författare)
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Electronic and optical properties of TiO2
- 2005
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Konferensbidrag (refereegranskat)abstract
- The electronic and optical properties of the rutile titanium dioxide compound have been investigated experimentally by absorption measurements and theoretically by a full-potential linearized augmented plane wave (FPLAPW) method within the local density approximation (LDA). The thin films for the absorption measurements were prepared by DC magnetron sputtering. The theoretical results for the absorption compared qualitatively well with the experimental findings. The dielectric functions and band-structure have also been calculated, and the LDA band-gap energy is corrected by an on-site Coulomb potential.
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| 4. |
- Da Silva, A. F., et al.
(författare)
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Linear optical response of Si1-xGex compounds
- 2005
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Ingår i: Quantum Sensing and Nanophotonic Devices II. - : SPIE - International Society for Optical Engineering. - 081945706X ; 5732:1, s. 556-564
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Konferensbidrag (refereegranskat)abstract
- Si1-xGex is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n-and p-type impurities and with different Ge concentrations. The linear optical response of Si 1-x Gex is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε e(ω) = ε1(ω) + iε 2(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.
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| 5. |
- da Silva, A. F., et al.
(författare)
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Optical properties of in situ doped and undoped titania nanocatalysts and doped titania sol-gel nanofilms
- 2006
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5365-5367
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present spectroscopic properties of doped and undoped titanium dioxide (TiO2) as nanofilms prepared by the sol-gel process with rhodamine 6G doping and studied by photoacoustic absorption, excitation and emission spectroscopy. The absorption spectra of TiO2 thin films doped with rhodamine 6G at very low concentration during their preparation show two absorption bands, one at 2.3 eV attributed to molecular dimmer formation, which is responsible for the fluorescence quenching of the sample and the other at 3.0 eV attributed to TiO2 absorption, which subsequently yields a strong en-fission band at 600 nm. The electronic band structure and optical properties of the rutile phase of TiO2 are calculated employing a fully relativistic, full-potential, linearized, augmented plane-wave (FPLAPW) method within the local density approximation (LDA). Comparison of this calculation with experimental data for TiO2 films prepared for undoped sol-gels and by sputtering is performed.
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| 6. |
- Ahuja, Rajeev, et al.
(författare)
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Electronic and optical properties of lead iodide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
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Tidskriftsartikel (refereegranskat)abstract
- The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
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| 7. |
- Ahuja, Rajeev, et al.
(författare)
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Optical properties of 4H-SiC
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2099-2103
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Tidskriftsartikel (refereegranskat)abstract
- The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies.
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| 8. |
- Araujo, C. M., et al.
(författare)
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Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
- 2002
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Ingår i: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
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Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
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| 9. |
- Baroni, M. P. M. A., et al.
(författare)
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Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering
- 2006
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Ingår i: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 352:32-35, s. 3734-3738
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Tidskriftsartikel (refereegranskat)abstract
- Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby environment on PS and PDLC samples. The dielectric function is also calculated for the bulk diamond-like carbon using the full-potential linearized augmented plane wave method within the framework of local density approximation to density functional theory. From the measurement a low real dielectric constant of about 4.5 at 0.8 eV was found whereas the calculated e(1)(0) for the bulk diamond has a value of 5.5.
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| 10. |
- da Silva, A. F., et al.
(författare)
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Electrical resistivity of acceptor carbon in GaAs
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:5, s. 2532-2535
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Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 10(17) and 10(19) cm(-3). Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal-nonmetal transition was found to be about 10(18) cm(-3).
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