| 1. |
- Tomas, S. A., et al.
(författare)
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Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol-gel nanofilms
- 2005
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 36:3-6, s. 570-573
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties and the band structure of TiO2 sol-gel thin films prepared by the sot-gel process and doped with methylene blue or rhodamine were studied by absorption, excitation and emission spectroscopy. The absorption spectra show two absorption bands, around 2.3 eV and above 3.0 eV suggesting that besides the excitation bands observed in rhodamine at 2.3 eV an efficient energy transfer occurs between the TiO2 conduction band and the molecular rhodamine excited states, yielding a strong emission band at 600 nm, while for methylene blue a strong hypsochromic shift of the absorption bands is observed. The optical absorption and band gap energy for the phase rutile of TiO2 films were calculated with a LDA+U/FPLAPW method, and a comparison of this calculation with experimental data of TiO2 films prepared by undoped sol-gel and sputtering is performed.
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| 2. |
- Astrath, N. G. C., et al.
(författare)
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Band gap energy determination by photoacoustic spectroscopy under continuous light excitation
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:23
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Tidskriftsartikel (refereegranskat)abstract
- In this work the authors used the photoacoustic spectroscopy under continuous light excitation to determine the optical band gap of semiconductors. The experiments were performed in lead iodide PbI2 and hexagonal silicon carbide 4H-SiC samples. The nonradiative relaxation processes are discussed in terms of the generated signal. A mechanism to describe the signal increase/decrease under the continuous excitation is presented. The results showed that the method was useful to locate the band gap directly from the optical absorption spectra.
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| 3. |
- Baroni, Mpma, et al.
(författare)
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Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
- 2006
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Ingår i: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 37:4, s. 290-294
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Tidskriftsartikel (refereegranskat)abstract
- Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of pi-Si.
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| 4. |
- Da Silva, A. F., et al.
(författare)
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Linear optical response of Si1-xGex compounds
- 2005
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Ingår i: Quantum Sensing and Nanophotonic Devices II. - : SPIE - International Society for Optical Engineering. - 081945706X ; 5732:1, s. 556-564
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Konferensbidrag (refereegranskat)abstract
- Si1-xGex is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n-and p-type impurities and with different Ge concentrations. The linear optical response of Si 1-x Gex is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε e(ω) = ε1(ω) + iε 2(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.
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| 5. |
- da Silva, A. F., et al.
(författare)
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Optical properties of in situ doped and undoped titania nanocatalysts and doped titania sol-gel nanofilms
- 2006
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5365-5367
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present spectroscopic properties of doped and undoped titanium dioxide (TiO2) as nanofilms prepared by the sol-gel process with rhodamine 6G doping and studied by photoacoustic absorption, excitation and emission spectroscopy. The absorption spectra of TiO2 thin films doped with rhodamine 6G at very low concentration during their preparation show two absorption bands, one at 2.3 eV attributed to molecular dimmer formation, which is responsible for the fluorescence quenching of the sample and the other at 3.0 eV attributed to TiO2 absorption, which subsequently yields a strong en-fission band at 600 nm. The electronic band structure and optical properties of the rutile phase of TiO2 are calculated employing a fully relativistic, full-potential, linearized, augmented plane-wave (FPLAPW) method within the local density approximation (LDA). Comparison of this calculation with experimental data for TiO2 films prepared for undoped sol-gels and by sputtering is performed.
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| 6. |
- Fiedler, J., et al.
(författare)
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Perspectives on weak interactions in complex materials at different length scales
- 2023
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Ingår i: Physical Chemistry, Chemical Physics - PCCP. - : Royal Society of Chemistry (RSC). - 1463-9076 .- 1463-9084. ; 25:4, s. 2671-2705
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Forskningsöversikt (refereegranskat)abstract
- Nanocomposite materials consist of nanometer-sized quantum objects such as atoms, molecules, voids or nanoparticles embedded in a host material. These quantum objects can be exploited as a super-structure, which can be designed to create material properties targeted for specific applications. For electromagnetism, such targeted properties include field enhancements around the bandgap of a semiconductor used for solar cells, directional decay in topological insulators, high kinetic inductance in superconducting circuits, and many more. Despite very different application areas, all of these properties are united by the common aim of exploiting collective interaction effects between quantum objects. The literature on the topic spreads over very many different disciplines and scientific communities. In this review, we present a cross-disciplinary overview of different approaches for the creation, analysis and theoretical description of nanocomposites with applications related to electromagnetic properties.
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| 7. |
- Gonzalez-Borrero, P. P., et al.
(författare)
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Optical band-gap determination of nanostructured WO3 film
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:6
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Tidskriftsartikel (refereegranskat)abstract
- The optical band-gap energy of a nanostructured tungsten trioxide film is determined using the photoacoustic spectroscopy method under continuous light excitation. The mechanism of the photoacoustic signal generation is discussed. The band-gap energy is also computed by other methods. The absorption coefficient as well as the band-gap energy of three different crystal structures of tungsten trioxide is calculated by a first-principles Green's function approach using the projector augmented wave method. The theoretical study indicates that the cubic crystal structure shows good agreement with the experimental data.
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| 8. |
- Klein, T., et al.
(författare)
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Metal-insulator transition and superconductivity in boron-doped diamond
- 2007
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:165313
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Tidskriftsartikel (refereegranskat)abstract
- We report on a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the {100} direction. The system presents a metal-insulator transition (MIT) for a boron concentration (nB) on the order of nc~4.5×1020 cm−3, in excellent agreement with numerical calculations. The temperature dependence of the conductivity and Hall effect can be well described by variable range hopping for nB<nc with a characteristic hopping temperature T0 strongly reduced due to the proximity of the MIT. All metallic samples (i.e., for nB>nc) present a superconducting transition at low temperature. The zero-temperature conductivity 0 deduced from fits to the data above the critical temperature (Tc) using a classical quantum interference formula scales as 0(nB/nc−1) with ~1. Large Tc values (0.4 K) have been obtained for boron concentration down to nB/nc~1.1 and Tc surprisingly mimics a (nB/nc−1)1/2 law. Those high Tc values can be explained by a slow decrease of the electron-phonon coupling parameter and a corresponding drop of the Coulomb pseudopotential µ* as nBnc.
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| 9. |
- Kumar, Mukesh, et al.
(författare)
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Bulk properties of InN films determined by experiments and theory
- 2014
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 403, s. 124-127
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Tidskriftsartikel (refereegranskat)abstract
- Built properties of InN are determined by combining experimental and theoretical studies. In this work, we produced high quality InN film deposited on GaN templates by a modified ion beam assisted deposition technique confirmed by low temperature photoluminescence and absorption. The density of states, real and imaginary parts of the complex dielectric function and the absorption coefficient are calculated by means of first principles beyond density functional theory. The quasi particle aspect is described in the framework of a quasi particle method (the GW approximation). The calculated band gap energy is similar to 0.8 eV whereas significance in the optical absorption occurs at similar to 1.2 eV, which are consistent with both luminescence and absorption results. The Bethe-Salpeter equation is utilized to model the two particle exciton interactions, revealing a strong excitonic peak just below the absorption edge of InN.
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| 10. |
- Ahuja, Rajeev, et al.
(författare)
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Electronic and optical properties of lead iodide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
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Tidskriftsartikel (refereegranskat)abstract
- The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
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