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Doping of silicon c...
Doping of silicon carbide by ion implantation
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Svensson, BG (författare)
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- Hallen, A (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Linnarsson, M K (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Kuznetsov, AY (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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Janson, MS (författare)
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- Aberg, D (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Osterman, J (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Persson, Per (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik,Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Hultman, Lars (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Storasta, Liutauras (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Carlsson, Fredrik (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Bergman, JP (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Jagadish, C (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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- Morvan, E (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain
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(creator_code:org_t)
- Trans Tech Publications Inc. 2001
- 2001
- Engelska.
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Ingår i: Materials Science Forum, Vols. 353-356. - : Trans Tech Publications Inc.. - 9780878498734 - 0878498737 ; , s. 549-554, s. 549-554
- Relaterad länk:
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https://urn.kb.se/re...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- defect recombination
- dopant activation
- dopant compensation
- interstitial clusters
- Ostwald ripening
- transient enhanced diffusion
- TECHNOLOGY
- TEKNIKVETENSKAP
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Svensson, BG
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Hallen, A
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Linnarsson, M K
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Kuznetsov, AY
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Janson, MS
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Aberg, D
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Osterman, J
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Persson, Per
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Hultman, Lars
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Storasta, Liutau ...
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Carlsson, Fredri ...
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Bergman, JP
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Jagadish, C
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Morvan, E
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NATURVETENSKAP
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Materials Scienc ...
- SILICON CARBIDE ...
- Av lärosätet
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Linköpings universitet
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Kungliga Tekniska Högskolan