| 1. |
- Araujo, C. M., et al.
(författare)
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Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
- 2002
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Ingår i: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
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Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
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| 2. |
- Fernandez, J. R. L., et al.
(författare)
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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 231:3, s. 420-427
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Tidskriftsartikel (refereegranskat)abstract
- The critical impurity concentration N-c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems. is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a Lorentz-Lorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in N-c as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10K. It presents a metallic character above a certain high impurity concentration identified as N-c. The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest.
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| 3. |
- Ferreira da Silva, A., et al.
(författare)
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Improved theoretical model of InN optical properties
- 2014
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Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1862-6351. ; 11:3-4, s. 581-584
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GWo). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique.
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| 4. |
- Fiedler, J., et al.
(författare)
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Perspectives on weak interactions in complex materials at different length scales
- 2023
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Ingår i: Physical Chemistry, Chemical Physics - PCCP. - : Royal Society of Chemistry (RSC). - 1463-9076 .- 1463-9084. ; 25:4, s. 2671-2705
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Forskningsöversikt (refereegranskat)abstract
- Nanocomposite materials consist of nanometer-sized quantum objects such as atoms, molecules, voids or nanoparticles embedded in a host material. These quantum objects can be exploited as a super-structure, which can be designed to create material properties targeted for specific applications. For electromagnetism, such targeted properties include field enhancements around the bandgap of a semiconductor used for solar cells, directional decay in topological insulators, high kinetic inductance in superconducting circuits, and many more. Despite very different application areas, all of these properties are united by the common aim of exploiting collective interaction effects between quantum objects. The literature on the topic spreads over very many different disciplines and scientific communities. In this review, we present a cross-disciplinary overview of different approaches for the creation, analysis and theoretical description of nanocomposites with applications related to electromagnetic properties.
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| 5. |
- Klein, T., et al.
(författare)
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Metal-insulator transition and superconductivity in boron-doped diamond
- 2007
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:165313
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Tidskriftsartikel (refereegranskat)abstract
- We report on a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the {100} direction. The system presents a metal-insulator transition (MIT) for a boron concentration (nB) on the order of nc~4.5×1020 cm−3, in excellent agreement with numerical calculations. The temperature dependence of the conductivity and Hall effect can be well described by variable range hopping for nB<nc with a characteristic hopping temperature T0 strongly reduced due to the proximity of the MIT. All metallic samples (i.e., for nB>nc) present a superconducting transition at low temperature. The zero-temperature conductivity 0 deduced from fits to the data above the critical temperature (Tc) using a classical quantum interference formula scales as 0(nB/nc−1) with ~1. Large Tc values (0.4 K) have been obtained for boron concentration down to nB/nc~1.1 and Tc surprisingly mimics a (nB/nc−1)1/2 law. Those high Tc values can be explained by a slow decrease of the electron-phonon coupling parameter and a corresponding drop of the Coulomb pseudopotential µ* as nBnc.
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| 6. |
- Kumar, Mukesh, et al.
(författare)
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Bulk properties of InN films determined by experiments and theory
- 2014
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 403, s. 124-127
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Tidskriftsartikel (refereegranskat)abstract
- Built properties of InN are determined by combining experimental and theoretical studies. In this work, we produced high quality InN film deposited on GaN templates by a modified ion beam assisted deposition technique confirmed by low temperature photoluminescence and absorption. The density of states, real and imaginary parts of the complex dielectric function and the absorption coefficient are calculated by means of first principles beyond density functional theory. The quasi particle aspect is described in the framework of a quasi particle method (the GW approximation). The calculated band gap energy is similar to 0.8 eV whereas significance in the optical absorption occurs at similar to 1.2 eV, which are consistent with both luminescence and absorption results. The Bethe-Salpeter equation is utilized to model the two particle exciton interactions, revealing a strong excitonic peak just below the absorption edge of InN.
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| 7. |
- Ahuja, Rajeev, et al.
(författare)
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Electronic and optical properties of lead iodide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
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Tidskriftsartikel (refereegranskat)abstract
- The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
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| 8. |
- da Silva, A. F., et al.
(författare)
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Optical properties of oxide compounds PbO, SnO2 and TiO2
- 2004
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T109, s. 180-183
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of the oxide compounds PbO and SnO2 have been investigated experimentally by transmission spectroscopy measurements and theoretically by a full-potential linearized augmented plane wave (FPLAPW) method. The dielectric functions of the rutile TiO2 has also been calculated. The calculated band-gap energies as well as the optical absorption were found to be in a very good qualitatively agreement with the experimental results.
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| 9. |
- Guo, J. H., et al.
(författare)
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Polarization-dependent soft-x-ray absorption of a highly oriented ZnO microrod-array
- 2005
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 17:1, s. 235-240
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Tidskriftsartikel (refereegranskat)abstract
- Polarization-dependent x-ray absorption measurements were performed on a crystalline ZnO three-dimensional array consisting of highly oriented microrods as well as on particulate thin film consisting of monodisperse spherical nanoparticles. Strong anisotropic effects have been observed for the highly oriented ZnO rods, unlike for the isotropic spherical ones. Full-potential calculations of orbital-resolved x-ray absorption of a ZnO wurtzite periodic crystal, including the Zn 3d as part of the valence states, shows a very good agreement with the experimental findings. Comprehensive fundamental knowledge of the electronic structure of ZnO is obtained by probing and demonstrating the orbital symmetry of oxygen and its contribution to the conduction band of this important II-VI semiconductor.
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| 10. |
- Guo, J. H., et al.
(författare)
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Polarization-dependent soft-x-ray absorption of highly oriented ZnO microrod arrays
- 2002
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 14:28, s. 6969-6974
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Tidskriftsartikel (refereegranskat)abstract
- Polarization-dependent x-ray absorption measurements were performed on crystalline ZnO three-dimensional arrays consisting of highly oriented microrods as well as on particulate thin films consisting of monodisperse spherical nanoparticles. Strong anisotropic effects have been observed for the highly oriented ZnO rods, but not for the isotropic spherical nanoparticles. Full-potential calculations of the orbital-resolved x-ray absorption of a ZnO wurtzite periodic crystal, including Zn 3d among the valence states, show very good agreement with the experimental findings. Comprehensive fundamental knowledge of the electronic structure of ZnO is obtained by probing and demonstrating the orbital symmetry of oxygen and its contribution to the conduction band of this important II-VI semiconductor.
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