| 1. |
- Ahlberg, Erik, et al.
(author)
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"Vi klimatforskare stödjer Greta och skolungdomarna"
- 2019
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In: Dagens nyheter (DN debatt). - 1101-2447.
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Journal article (pop. science, debate, etc.)abstract
- DN DEBATT 15/3. Sedan industrialiseringens början har vi använt omkring fyra femtedelar av den mängd fossilt kol som får förbrännas för att vi ska klara Parisavtalet. Vi har bara en femtedel kvar och det är bråttom att kraftigt reducera utsläppen. Det har Greta Thunberg och de strejkande ungdomarna förstått. Därför stödjer vi deras krav, skriver 270 klimatforskare.
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| 2. |
- Grevholm, Barbro, et al.
(author)
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Lära och undervisa matematik : från förskoleklass till åk 6
- 2012
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Book (other academic/artistic)abstract
- Lära och undervisa matematik - från förskoleklass till åk 6 är en grundbok i matematik och matematikämnets didaktik. Den vänder sig till lärarstuderande och till verksamma lärare som vill aktualisera sina kunskaper och ta del av den senaste forskningen samt sätta sig in i de nya kursplanerna och kunskapskraven i matematik.
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| 3. |
- Håkanson, Ulf, et al.
(author)
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Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
- 2002
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In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Conference paper (peer-reviewed)abstract
- Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
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| 4. |
- Håkanson, Ulf, et al.
(author)
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Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:3, s. 494-496
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Journal article (peer-reviewed)abstract
- We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
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| 5. |
- Johansson, Mikael, et al.
(author)
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Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
- 2003
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 68:12
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Journal article (peer-reviewed)abstract
- We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)].
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| 6. |
- Lind, Erik, et al.
(author)
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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
- 2009
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In: IEEE Transactions on Electron Devices. - 0018-9383. ; 56:2, s. 201-205
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Journal article (peer-reviewed)abstract
- We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.
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| 7. |
- Lind, Erik, et al.
(author)
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High Frequency Performance of Vertical InAs Nanowire MOSFET
- 2010
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In: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm). - 1092-8669. - 9781424459193
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Conference paper (peer-reviewed)abstract
- We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
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| 8. |
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| 9. |
- Persson, Karl-Magnus, et al.
(author)
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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- 2013
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In: IEEE Transactions on Electron Devices. - 0018-9383. ; 60:9, s. 2761-2767
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Journal article (peer-reviewed)abstract
- This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.
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