| 1. |
- Engström, Gunnar, et al.
(författare)
-
Pulmonary function and atherosclerosis in the general population : causal associations and clinical implications
- 2024
-
Ingår i: European Journal of Epidemiology. - : Springer Nature. - 0393-2990 .- 1573-7284.
-
Tidskriftsartikel (refereegranskat)abstract
- Reduced lung function is associated with cardiovascular mortality, but the relationships with atherosclerosis are unclear. The population-based Swedish CArdioPulmonary BioImage study measured lung function, emphysema, coronary CT angiography, coronary calcium, carotid plaques and ankle-brachial index in 29,593 men and women aged 50–64 years. The results were confirmed using 2-sample Mendelian randomization. Lower lung function and emphysema were associated with more atherosclerosis, but these relationships were attenuated after adjustment for cardiovascular risk factors. Lung function was not associated with coronary atherosclerosis in 14,524 never-smokers. No potentially causal effect of lung function on atherosclerosis, or vice versa, was found in the 2-sample Mendelian randomization analysis. Here we show that reduced lung function and atherosclerosis are correlated in the population, but probably not causally related. Assessing lung function in addition to conventional cardiovascular risk factors to gauge risk of subclinical atherosclerosis is probably not meaningful, but low lung function found by chance should alert for atherosclerosis.
|
|
| 2. |
- Engström, Gunnar, et al.
(författare)
-
The Swedish CArdioPulmonary BioImage Study : objectives and design
- 2015
-
Ingår i: Journal of Internal Medicine. - : Wiley. - 0954-6820 .- 1365-2796. ; 278:6, s. 645-659
-
Tidskriftsartikel (refereegranskat)abstract
- Cardiopulmonary diseases are major causes of death worldwide, but currently recommended strategies for diagnosis and prevention may be outdated because of recent changes in risk factor patterns. The Swedish CArdioPulmonarybioImage Study (SCAPIS) combines the use of new imaging technologies, advances in large-scale 'omics' and epidemiological analyses to extensively characterize a Swedish cohort of 30 000 men and women aged between 50 and 64 years. The information obtained will be used to improve risk prediction of cardiopulmonary diseases and optimize the ability to study disease mechanisms. A comprehensive pilot study in 1111 individuals, which was completed in 2012, demonstrated the feasibility and financial and ethical consequences of SCAPIS. Recruitment to the national, multicentre study has recently started.
|
|
| 3. |
- Bergström, Göran, 1964, et al.
(författare)
-
Body weight at age 20 and in midlife is more important than weight gain for coronary atherosclerosis: Results from SCAPIS.
- 2023
-
Ingår i: Atherosclerosis. - : Elsevier BV. - 1879-1484 .- 0021-9150. ; 373, s. 46-54
-
Tidskriftsartikel (refereegranskat)abstract
- Elevated body weight in adolescence is associated with early cardiovascular disease, but whether this association is traceable to weight in early adulthood, weight in midlife or to weight gain is not known. The aim of this study is to assess the risk of midlife coronary atherosclerosis being associated with body weight at age 20, body weight in midlife and body weight change.We used data from 25,181 participants with no previous myocardial infarction or cardiac procedure in the Swedish CArdioPulmonary bioImage Study (SCAPIS, mean age 57 years, 51% women). Data on coronary atherosclerosis, self-reported body weight at age 20 and measured midlife weight were recorded together with potential confounders and mediators. Coronary atherosclerosis was assessed using coronary computed tomography angiography (CCTA) and expressed as segment involvement score (SIS).The probability of having coronary atherosclerosis was markedly higher with increasing weight at age 20 and with mid-life weight (p < 0.001 for both sexes). However, weight increase from age 20 until mid-life was only modestly associated with coronary atherosclerosis. The association between weight gain and coronary atherosclerosis was mainly seen in men. However, no significant sex difference could be detected when adjusting for the 10-year delay in disease development in women.Similar in men and women, weight at age 20 and weight in midlife are strongly related to coronary atherosclerosis while weight increase from age 20 until midlife is only modestly related to coronary atherosclerosis.
|
|
| 4. |
- Asekritova, Irina, et al.
(författare)
-
Distribution and Rearranement Estimates of the Maximal Functions and Interpolation
- 1997
-
Ingår i: Studia Mathematica. - 0039-3223 .- 1730-6337. ; 124:2, s. 107-132
-
Tidskriftsartikel (refereegranskat)abstract
- There are given necessary and sufficient conditions on a measure dμ(x)=w(x)dx under which the key estimates for the distribution and rearrangement of the maximal function due to Riesz, Wiener, Herz and Stein are valid. As a consequence, we obtain the equivalence of the Riesz and Wiener inequalities which seems to be new even for the Lebesgue measure. Our main tools are estimates of the distribution of the averaging function f** and a modified version of the Calderón-Zygmund decomposition. Analogous methods allow us to obtain K-functional formulas in terms of the maximal function for couples of weighted $L_p$-spaces.
|
|
| 5. |
- Asekritova, Irina, et al.
(författare)
-
Lions-Peetre Reiteration Formulas for Triples and Their Application
- 2001
-
Ingår i: Studia Mathematica. - : Institute of Mathematics, Polish Academy of Sciences. - 0039-3223 .- 1730-6337. ; 145:3, s. 219-254
-
Tidskriftsartikel (refereegranskat)abstract
- We present, discuss and apply two reiteration theorems for triples of quasi-Banach function lattices. Some interpolation results for block-Lorentz spaces and triples of weighted Lp-spaces are proved. By using these results and a wavelet theory approach we calculate (θ,q)-spaces for triples of smooth function spaces (such as Besov spaces, Sobolev spaces, etc.). In contrast to the case of couples, for which even the scale of Besov spaces is not stable under interpolation, for triples we obtain stability in the frame of Besov spaces based on Lorentz spaces. Moreover, by using the results and ideas of this paper, we can extend the Stein–Weiss interpolation theorem known for Lp(μ)-spaces with change of measures to Lorentz spaces with change of measures. In particular, the results obtained show that for some problems in analysis the three-space real interpolation approach is really more useful than the usual real interpolation between couples.
|
|
| 6. |
- Hsu, Chih-Wei, et al.
(författare)
-
Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.
|
|
| 7. |
- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
-
Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
- 2002
-
Ingår i: Phys. Stat. Sol. (c), Vol. 0, Issue 1. - : Wiley. ; , s. 205-208
-
Konferensbidrag (refereegranskat)abstract
- In this study we report the successful growth of AlN and AlN/GaN on SiC substrates in a MOCVD process based on a hot-wall susceptor design. Different features of AlN growth are established depending on the total reactor pressure, temperature, off-cut SiC substrate orientation and V-to-III gas-flow ratio. The feasibility of the hot-wall MOCVD concept is demonstrated by the performance of AlN/GaN structures with state-of-the-art properties with strong potential for further optimization. A narrower X-ray rocking curve over the asymmetric 10.4 than the symmetric 00.2 reflection clearly underlines the high overall crystal quality of the GaN layers on AlN buffers grown in this type of MOCVD reactor.
|
|
| 8. |
- Kakanakova-Georgieva, A, et al.
(författare)
-
Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
- 2003
-
Ingår i: Materials Science Forum, Vols. 433-436. - : Trans Tech Publications. ; , s. 991-994
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on the growth of high-quality GaN layers on SiC substrates by hotwall MOCVD. Use of AlN buffer with a thickness exceeding 50 nm is employed for the GaN deposition and it is found to encompass most of the misfit defects. A narrower X-ray rocking curve over asymmetric than over symmetric reflection is measured - full width at a half maximum (FWHM) of 350 arcsec vs. FWHM of 490 arcsec for 10.4 and 00.2 peaks, respectively, indicating high overall quality of the film. The free exciton photoluminescence emission peak has rather narrow FWHM of 5 meV. The typical thickness of the GaN layers is about 2 mum and they are completely depleted according to the capacitance-voltage profiling, which corresponds to estimated residual doping of less than 5x10(14) cm(-3). Only in some cases when the GaN layer is not depleted, deep level transient spectroscopy is performed and two deep traps with activation energies of 0.26 and 0.59 eV below the conduction band are measured.
|
|
| 9. |
- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
-
Sublimation epitaxy of AlN on SiC : Growth morphology and structural features
- 2004
-
Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 273:1-2, s. 161-166
-
Tidskriftsartikel (refereegranskat)abstract
- In order to study the development of individual AlN crystallites, sublimation epitaxy of AlN was performed on 4H-SiC, off-axis substrates in an inductively heated setup. Growth process variables like temperature, extrinsic nitrogen pressure and time were changed in an attempt to favor the lateral growth of individual AlN crystallites and thus open possibilities to prepare continuous patterns. Scanning and transmission electron microscopy and cathodoluminescence were used to obtain plan-view and cross-sectional images of the grown patterns and to study their morphology and structural features. The growth at 1900°C/200mbar results in AlN pattern consisting of individual single wurzite AlN crystallites with plate-like shape aligned along [1 1̄ 0 0] direction. The only defects these AlN crystallites contain are threading dislocations, some of which are terminated by forming half-loops. Because of the uniform distribution of the crystallites and their high structural perfection, this AlN pattern could represent interest as a template for bulk AlN growth. Alternative growth approaches to AlN crystallite formation are possible resulting in variation of the final AlN pattern structure. From a viewpoint of obtaining continuous patterns, the more favorable growth conditions involve applying of increased extrinsic gas pressure, 700 mbar in our case. © 2004 Elsevier B.V. All rights reserved.
|
|
| 10. |
- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
-
Superior material properties of AlN on vicinal 4H-SiC
- 2006
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:3
-
Tidskriftsartikel (refereegranskat)abstract
- The crystal structure and optical properties of thick (>100 nm) AlN layers grown by hot-wall metalorganic chemical vapor deposition are characterized by infrared spectroscopic ellipsometry, cathodoluminescence, and transmission electron microscopy. The choice of substrates among the available SiC wafer polytype modifications (4H/6H) and misorientations (on-/off-axis cut) is found to determine the AlN defect interaction, stress homogeneity, and luminescence. The growth of thick AlN layers benefits by performing the epitaxy on off-axis substrates because, due to stacking faults, the propagation of threading defects in AlN layers is stopped in a narrow interface region. © 2006 American Institute of Physics.
|
|
