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Träfflista för sökning "WFRF:(Persson Per O. A.) ;lar1:(kth)"

Sökning: WFRF:(Persson Per O. A.) > Kungliga Tekniska Högskolan

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  • Wu, D., et al. (författare)
  • A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
  • 2003
  • Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 24:3, s. 171-173
  • Tidskriftsartikel (refereegranskat)abstract
    • Proof-of-concept pMOSFETs with a strained-Si0.7Ge0.3 surface-channel deposited by selective epitaxy and a TiN/Al2O3/HfAIO(x)/Al2O3 gate stack grown by atomic layer chemical vapor deposition (ALD) techniques were fabricated. The Si0.7Ge0.3 pMOSFETs exhibited more than 30% higher current drive and peak transconductance than reference Si pMOSFETs with the same gate stack. The effective mobility for the Si reference coincided with the universal hole mobility curve for Si. The presence of a relatively low density of interface states, determined as 3.3x10(11) cm(-2) eV(-1), yielded a subthreshold slope of 75 mV/dec. for the Si reference. For the Si0.7Ge0.3 pMOSFETs, these values were 1.6x10(12) cm(-2) eV(-1) and 110 mV/dec., respectively.
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3.
  • Karlsson, Linda H., et al. (författare)
  • Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
  • 2016
  • Ingår i: Materials letters (General ed.). - : Elsevier. - 0167-577X .- 1873-4979. ; 181, s. 325-327
  • Tidskriftsartikel (refereegranskat)abstract
    • During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved.
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