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Sökning: WFRF:(Persson Per O. A.) > Hjörvarsson B

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1.
  • Dahlqvist, Martin, et al. (författare)
  • Complex magnetism in nanolaminated Mn2GaC
  • 2014
  • Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
    • We have used first-principles calculations and Heisenberg Monte Carlo simulations to search for the magnetic ground state of Mn2GaC, a recently synthesized magnetic nanolaminate. We have, independent on method, identified a range of low energy collinear as well as non-collinear magnetic configurations, indicating a highly frustrated magnetic material with several nearly degenerate magnetic states. An experimentally obtained magnetization of only 0.29 per Mn atom in Mn2GaC may be explained by canted spins in an antiferromagnetic configuration of ferromagnetically ordered sub-layers with alternating spin orientation, denoted AFM[0001]. Furthermore, low temperature X-ray diffraction show a new basal plane peak appearing upon a magnetic transition, which is consistent with the here predicted change in inter-layer spacing for the AFM[0001] configuration.
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2.
  • Rantzer, Annika, et al. (författare)
  • Sputter-deposited a-Si:H for p-i-n photodiodes
  • Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
    • DC magnetron sputter deposition is explored as an alternative for fabricating vertically integrated sensor systems in the form of p-i-n diodes of hydrogenated amorphous silican deposited on CMOS integrated circuit substrates in a post-processing step. We focus here on dopant oncorporation and surface morphological evolution during synthesis of the p-i-n diode sensor structures. The Doping was accomplished using doped targets in a mixed H2/Ar environment. Incorporated P concetrations range from 2.62 to 4.8 x 1019 cm-3 with corresponding conductivities, σ, up to 1.4 x10-5 ohm-1cm-1. B contentrations are between 2.79 and 6.7 X 1020 cm-3 with σ = 4 x 10-5 to 4 x 10-2 ohm-1cm-1. The results of the dopant incorporation are in agreement with reported molecular dynamics simulations. The best intrinsic films have a light to dark conductivity ratio of 102 for white light at an intensity of 10 W/m2. The dark conductivity is a 8 x 10-9 ohm-1cm-1. We conclude that dc magnetron sputter deposition is a good candidate for future device fabrication.
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