| 1. |
- Palisaitis, Justinas, et al.
(författare)
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Where is the unpaired transition metal in substoichiometric diboride line compounds?
- 2021
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Ingår i: Acta Materialia. - : PERGAMON-ELSEVIER SCIENCE LTD. - 1359-6454 .- 1873-2453. ; 204
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Tidskriftsartikel (refereegranskat)abstract
- The atomic structure and local composition of high quality epitaxial substoichiometric titanium diboride (TiB1.9) thin film, deposited by unbalanced magnetron sputtering, were studied using analytical high-resolution scanning transmission electron microscopy, density functional theory, and image simulations. The unpaired Ti is pinpointed to inclusion of Ti-based stacking faults within a few atomic layers, which terminates the {1 (1) over bar 00} prismatic planes of the crystal structure and attributed to the absence of B between Ti planes that locally relaxes the structure. This mechanism allows the line compound to accommodate off-stoichiometry and remain a line compound between defects. The planar defects are embedded in otherwise stoichiometric TiB2 and are delineated by insertion of dislocations. An accompanied decrease in Ti-Ti bond lengths along and across the faults is observed. (c) 2020ActaMaterialiaInc. PublishedbyElsevierLtd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/)
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| 2. |
- Bakhit, Babak, et al.
(författare)
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Improving the high-temperature oxidation resistance of TiB2 thin films by alloying with Al
- 2020
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Ingår i: Acta Materialia. - : PERGAMON-ELSEVIER SCIENCE LTD. - 1359-6454 .- 1873-2453. ; 196, s. 677-689
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Tidskriftsartikel (refereegranskat)abstract
- Refractory transition-metal diborides (TMB2) are candidates for extreme environments due to melting points above 3000 degrees C, excellent hardness, good chemical stability, and thermal and electrical conductivity. However, they typically suffer from rapid high-temperature oxidation. Here, we study the effect of Al addition on the oxidation properties of sputter-deposited TiB2-rich Ti1-xAlxBy thin films and demonstrate that alloying the films with Al significantly increases the oxidation resistance with a slight decrease in hardness. TiB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a TiB2 target, while Ti1-xAlxBy alloy films are grown by hybrid high-power impulse and dc magnetron co-sputtering (Al-HiPIMS/TiB2-DCMS). All as-deposited films exhibit columnar structure. The column boundaries of TiB2.4 are B-rich, while Ti0.68Al0.32B1.35 alloys have Ti-rich columns surrounded by a Ti(1-x)Al(x)By tissue phase which is predominantly Al rich. Air-annealing TiB2.4 at temperatures above 500 degrees C leads to the formation of oxide scales that do not contain B and mostly consist of a rutile-TiO2 (s) phase. The resulting oxidation products are highly porous due to the evaporation of B2O3 (g) phase as well as the coarsening of TiO2 crystallites. This poor oxidation resistance is significantly improved by alloying with Al. While air-annealing at 800 degrees C for 0.5 h results in the formation of an similar to 1900-nm oxide scale on TiB2.4, the thickness of the scale formed on the Ti0.68Al0.32B1.35 alloys is similar to 470 nm. The enhanced oxidation resistance is attributed to the formation of a dense, protective Al-containing oxide scale that considerably decreases the oxygen diffusion rate by suppressing the oxide-crystallites coarsening. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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| 3. |
- Dorri, Megan, et al.
(författare)
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Synthesis and characterization of CrB 2 thin films grown by DC magnetron sputtering
- 2021
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Ingår i: Scripta Materialia. - : Pergamon-Elsevier Science Ltd. - 1359-6462 .- 1872-8456. ; 200
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Tidskriftsartikel (refereegranskat)abstract
- CrB x thin films with 1.90 < x < 2.08 have been deposited by direct-current magnetron sputtering (DCMS) from a stoichiometric CrB 2 target at 5 and 20 mTorr (0.67 and 2.67 Pa) Ar pressure onto sapphire (0 0 01) substrates. All films, irrespective of deposition conditions, exhibit a (0 0 01) texture. Attesting to the achievement of close-to-stoichiometric composition, epitaxial film growth is observed at 900 ?C, while film growth at 500 ?C yields (0001) fiber texture. Film composition does not depend on substrate temperature but exhibits slightly reduced B content with increasing pressure for samples deposited at 900 ?C. Excess B in the overstoichiometric epitaxial CrB 2.08 films segregates to form B-rich inclusions. Understoichiometry in CrB 1.90 films is accommodated by Cr-rich stacking faults on { 1 1? 00 } prismatic planes. ? 2021 The Author(s). Published by Elsevier Ltd on behalf of Acta Materialia Inc. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ )
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| 4. |
- Halim, Joseph, et al.
(författare)
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Experimental and Theoretical Investigations of Out-of-Plane Ordered Nanolaminate Transition Metal Borides: M4CrSiB2 (M = Mo, W, Nb)
- 2023
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Ingår i: Inorganic Chemistry. - : American Chemical Society (ACS). - 0020-1669 .- 1520-510X. ; 62:14, s. 5341-5347
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Tidskriftsartikel (refereegranskat)abstract
- We report the synthesis of three out-of-plane chemically ordered quaternary transition metal borides (o-MAB phases) of the chemical formula M4CrSiB2 (M = Mo, W, Nb). The addition of these phases to the recently discovered o-MAB phase Ti4MoSiB2 shows that this is indeed a new family of chemically ordered atomic laminates. Furthermore, our results expand the attainable chemistry of the traditional M5SiB2 MAB phases to also include Cr. The crystal structure and chemical ordering of the produced materials were investigated using high-resolution scanning transmission electron microscopy and X-ray diffraction by applying Rietveld refinement. Additionally, calculations based on density functional theory were performed to investigate the Cr preference for occupying the minority 4c Wyckoff site, thereby inducing chemical order.
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| 5. |
- Meshkian, Rahele, et al.
(författare)
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Theoretical Analysis, Synthesis, and Characterization of 2D W1.33C (MXene) with Ordered Vacancies
- 2019
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Ingår i: ACS APPLIED NANO MATERIALS. - : AMER CHEMICAL SOC. - 2574-0970. ; 2:10, s. 6209-6219
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Tidskriftsartikel (refereegranskat)abstract
- Synthesis of delaminated 2D W1.33C (MXene) has been performed by selectively etching Al as well as Sc/Y from the recently discovered nanolaminated i-MAX phases (W2/3Sc1/3)(2)AlC and (W2/3Y1/3)(2)AlC. Both quaternary phases produce MXenes with similar flake morphology and with a skeletal structure due to formation of ordered vacancies. The measured O, OH, and F terminations, however, differ in amount as well as in relative ratios, depending on parent material, evident from X-ray photoelectron spectroscopy. These findings are correlated to theoretical simulations based on first-principles, investigating the W1.33C, and the effect of termination configurations on structure, formation energy, stability, and electronic structure. The theoretical results indicate a favored F-rich surface composition, though with a system going from insulating/semiconducting to metallic for different termination configurations, suggesting a high tuning potential of these materials. Additionally, free-standing W1.33C films of 2-4 mu m thickness and with up to 10 wt % polymer (PEDOT:PSS) were tested as electrodes in supercapacitors, showing capacitances up to 600 F cm(-3) in 1 M H2SO4 and high capacitance retention for at least 10000 cycles at 10 A g(-1). This is highly promising results compared to other W-based materials to date.
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| 6. |
- Meshkian, Rahele, et al.
(författare)
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W-Based Atomic Laminates and Their 2D Derivative W1.33C MXene with Vacancy Ordering
- 2018
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 30:21
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Tidskriftsartikel (refereegranskat)abstract
- Structural design on the atomic level can provide novel chemistries of hybrid MAX phases and their MXenes. Herein, density functional theory is used to predict phase stability of quaternary i-MAX phases with in-plane chemical order and a general chemistry (W 2/3 M 2 1/3 ) 2 AC, where M 2 = Sc, Y (W), and A = Al, Si, Ga, Ge, In, and Sn. Of over 18 compositions probed, only two—with a monoclinic C2/c structure—are predicted to be stable: (W 2/3 Sc 1/3 ) 2 AlC and (W 2/3 Y 1/3 ) 2 AlC and indeed found to exist. Selectively etching the Al and Sc/Y atoms from these 3D laminates results in W 1.33 C-based MXene sheets with ordered metal divacancies. Using electrochemical experiments, this MXene is shown to be a new, promising catalyst for the hydrogen evolution reaction. The addition of yet one more element, W, to the stable of M elements known to form MAX phases, and the synthesis of a pure W-based MXene establishes that the etching of i-MAX phases is a fruitful path for creating new MXene chemistries that has hitherto been not possible, a fact that perforce increases the potential of tuning MXene properties for myriad applications.
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| 7. |
- Thörnberg, Jimmy, et al.
(författare)
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Microstructure and materials properties of understoichiometric TiBx thin films grown by HiPIMS
- 2020
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Ingår i: Surface & Coatings Technology. - : ELSEVIER SCIENCE SA. - 0257-8972 .- 1879-3347. ; 404
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Tidskriftsartikel (refereegranskat)abstract
- TiBx thin films with a B content of 1.43 <= x <= 2.70 were synthesized using high-power impulse magnetron sputtering (HiPIMS) and direct-current magnetron sputtering (DCMS). HiPIMS allows compositions ranging from understoichiometric to overstoichiometric dense TiBx thin films with a B/Ti ratio between 1.43 and 2.06, while DCMS yields overstoichiometric TiBx films with a B/Ti ratio ranging from 2.20 to 2.70. Excess B in overstoichiometric TiBx thin films from DCMS results in a hardness up to 37.7 +/- 0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase interlacing stoichiometric TiB2 columnar structures. We furthermore show that understoichiometric TiB1.43 thin films synthesized by HiPIMS, where the deficiency of B is found to be accommodated by Ti-rich planar defects, exhibit a superior hardness of 43.9 +/- 0.9 GPa. The apparent fracture toughness and thermal conductivity of understoichiometric TiB1.43 HiPIMS films are 4.2 +/- 0.1 MPa root m and 2.46 +/- 0.22 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB2.70 DCMS film samples of 3.1 +/- 0.1 MPa root m and 4.52 +/- 0.45 W/(mK). This work increases the fundamental understanding of understoichiometric TiBx thin films and their materials properties, and shows that understoichiometric films have properties matching or going beyond those with excess B.
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| 8. |
- Thörnberg, Jimmy, et al.
(författare)
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Oxidation resistance and mechanical properties of sputter-deposited Ti0.9Al0.1B2-y thin films
- 2022
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Ingår i: Surface & Coatings Technology. - : Elsevier Science SA. - 0257-8972 .- 1879-3347. ; 442
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Tidskriftsartikel (refereegranskat)abstract
- Direct-current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) were used to deposit understoichiometric Ti(1-x)Al(x)B(2-y )diboride coatings by sputtering from a segmented TiB2-AlB2 target using Ar and Kr as sputtering gas. For films with a fixed Al/(Ti + Al) ratio of x = 0.1 (Ti0.9Al0.1B2-y), the B content was varied with y & ISIN; (0.1, 0.6 and 0.7). For films with a fixed y = 0.7 (Ti1-xAlxB1.3), the Al content was varied with x & ISIN; (0.1, 0.4 and 0.7). Evaluation of the mechanical properties of the Ti1-xAlxB1.3 samples showed a reduction in both hardness and elastic modulus with increasing Al concentration, while the Ti0.9Al0.1B2-y samples showed a hardness increase with decreasing B content. Thus, Ti0.9Al0.1B1.3 films exhibited a superior hardness of 46.2 +/- 1.1 GPa and an elastic modulus of 523 & PLUSMN; 7 GPa, compared to the values for Ti0.9Al0.1B1.4 and Ti0.9Al0.1B1.9, showing a hardness of 44 +/- 1 GPa and 36 +/- 1 GPa, and an elastic modulus of 569 +/- 7 GPa and 493 +/- 6 GPa, respectively. The oxidation behavior of the mechanically most promising Ti0.9Al0.1B2-y sample series was investigated through air-annealing at 600 C for durations from 1 h to 10 h. All films formed a mixed non-conformal Al2O3-TiO2 oxide scale which acts as an inward and outward diffusion barrier, significantly reducing the oxidation rate compared to TiBz films, which form an oxide scale consisting of porous TiO2. The thinnest oxide scale after 10 h was found in the B-deficient samples, Ti0.9Al0.1B1.3 and Ti0.9Al0.1B1.4, at ~200 nm, which is significantly below that for Ti0.9Al0.1B1.9 at 320 nm. The enhanced oxidation resistance of highly understoichiometric films is due to the elimination of the B-rich tissue phase that is present at the grain boundaries for higher B content, where the latter has been shown to enhance the rate of oxidation in borides.
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| 9. |
- Thörnberg, Jimmy, et al.
(författare)
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Synthesis of (V2/3Sc1/3)(2)AlC i-MAX phase and V2-xC MXene scrolls
- 2019
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Ingår i: Nanoscale. - : ROYAL SOC CHEMISTRY. - 2040-3364 .- 2040-3372. ; 11:31, s. 14720-14726
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Tidskriftsartikel (refereegranskat)abstract
- We report the synthesis and characterization of a new laminated i-MAX phase, (V2/3Sc1/3)(2)AlC, with in-plane chemical ordering between the M-elements. We also present evidence for the solid solution (V2-xScx)(2)AlC, where x amp;lt;= 0.05. Chemical etching of the Al and Sc results in a two-dimensional (2D) MXene counterpart: V2-xC from the latter phase. Furthermore, etching with HF yields single-sheet MXene of flat morphology, while LiF + HCl gives MXene scrolls. We also show a 4x reduction in etching time for (V2-xScx)(2)AlC compared to V2AlC, suggesting that traces of Sc changes the phase stability, and make the material more susceptible to etching. The results show a path for improved control of MXene synthesis and morphology, which may be applicable also for other MAX/MXene systems.
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