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- Gustafsson, Oscar, et al.
(författare)
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Photoluminescence photoresponse from InSb/InAs-based quantum dot structures
- 2012
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 20:19, s. 21264-71
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Tidskriftsartikel (refereegranskat)abstract
- InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
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