| 1. |
- Höglund, Linda, 1974-, et al.
(författare)
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Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - Woodbury, NY : American Physical Society. - 1098-0121 .- 1550-235X. ; 82:3, s. 035314-
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Tidskriftsartikel (refereegranskat)abstract
- A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.
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| 2. |
- Pettersson, Håkan, et al.
(författare)
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Quantum Dots-in-a-Well Infrared Photodetectors-Electronic Structure and Optical Properties
- 2010
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Ingår i: Bulletin of American Physical Society. - : American Physical Society.
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Konferensbidrag (refereegranskat)abstract
- Quantum dots-in-a-well (DWELL) infrared photodetectors is a new class of nanophotonic devices with the potential of significantly increasing the performance and reducing the cost of infrared detectors. Here we present a comprehensive study of DWELL photodetector structures using a variety of optical techniques (PL, PLE, and PC). Complementary tunnel capacitance measurements support the electronic structure obtained from the optical measurements. A detailed energy level scheme based on the experimental findings is presented and compared to theoretical modeling. The presented work show the importance of combining different electrical and optical techniques to obtain a consistent model of complicated quantum structures which is crucial for the development of future nanophotonic devices.
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| 3. |
- Höglund, Linda, 1974-, et al.
(författare)
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Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
- 2006
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Ingår i: Proceedings of SPIE. - Bellingham, Wash. : SPIE - International Society for Optical Engineering. - 9780819464996 ; 6401, s. 1-640109
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Konferensbidrag (refereegranskat)abstract
- We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.5Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 × 10 10 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 μm and a full width at half maximum (FWHM) of 1.1 μm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 μm to 9.5 μm was demonstrated, by reversing the bias of the detector.
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| 4. |
- Höglund, Linda, et al.
(författare)
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Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors
- 2008
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Ingår i: Proceedings of SPIE, 6940, Infrared Technology and Applications XXXIV, 694002. - : SPIE. - 9780819471314
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Konferensbidrag (refereegranskat)abstract
- In this study, bias mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well (DWELL) infrared photodetectors. In DWELL structures, intersubband transitions in the conduction band occur from a discrete state in the quantum dot to a subband inthe quantum well. Compared to "conventional" quantum dot infrared photodetectors, where the transitions take place between different discrete bands in thequantum dots, new possibilities to tune the detection wavelength window are opened up, partly by varying the quantum dot energy levels and partly by adjusting the width and composition of the quantum well. In the DWELL structure used, an asymmetric positioning of the InAs quantum dot layer in a 8 nm wide In0.15Ga0.85As/GaAs QW has been applied which enables tuning of the peak detection wavelength within the long wavelength infrared (LWIR; 8 - 14 gm) region. When the applied bias was reversed, a wavelength shift from 8.5 to 9.5 mu m was observed for the peak position in the spectral response. For another DWELL structure, with a well width of 2 nm, the tuning range of the detector could be shifted from the medium wavelength infrared (MWIR; 3-5 mu m) region to the LWIR region. With small changes in the applied bias, the peak detection wavelength could be shifted from 5.1 to 8 mu m. These tuning properties ofDWELL structures could be essential for applications such as modulators and two-colour infrared detection. © (2008) COPYRIGHT SPIE--The International Society for Optical Engineering.
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