| 1. |
- Gottlob, H. D. B., et al.
(författare)
-
Gd silicate : A high-k dielectric compatible with high temperature annealing
- 2009
-
Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 249-252
-
Tidskriftsartikel (refereegranskat)abstract
- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.
|
|
| 2. |
- Gottlob, H. D. B., et al.
(författare)
-
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
- 2009
-
Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:7-9, s. 1642-1645
-
Tidskriftsartikel (refereegranskat)abstract
- We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
|
|
| 3. |
- Kaczmarczyk, M, et al.
(författare)
-
Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
- 2009
-
Ingår i: Materials Science & Engineering B: Solid-State Materials for Advanced Technology. - : Elsevier BV. - 0921-5107. ; 165:1-2, s. 98-102
-
Konferensbidrag (refereegranskat)abstract
- Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM), photoluminescence measurements (PL), and deep level transient spectroscopy (DLTS). We found that a well defined group of QDs with low size dispersion as revealed by AFM maintains its properties in PL spectra even if the QDs are covered by GaAs. Two well separated emission lines attributed to the QD-related ground- and excited-state transitions. respectively are found in the PL spectra. Contrary to the optical picture of a characteristic simplicity, DLTS spectra are found with higher complexity. This is due to combined thermal/tunneling processes and multi-particle emission. Despite the relatively good understanding of optical and electrical properties of QDs in PL and DLTS, respectively, there are still discrepancies between electrical and optical data for the energy of the QD ground states, which need more investigations to be explained.
|
|
| 4. |
|
|
| 5. |
- Nyström, Maria, et al.
(författare)
-
Att dra sig tillbaka från omgivningen : en ond cirkel vid svår psykisk ohälsa
- 2007
-
Ingår i: Vård i Norden. - : Sykepleiernes Samarbeid i Norden. - 0107-4083 .- 1890-4238. ; 27:1, s. 31-36
-
Tidskriftsartikel (refereegranskat)abstract
- To withdraw – a viscous circle in severe mental illness. The aim of this study has been to analyse and describe circumstances behind and experiences of severely mentally ill persons’ withdrawal. Six persons, two women and four men, aged 31–57, with experiences of withdrawal due to psychosis, were interviewed. Manifest and latent meanings were described. Factors that led to withdrawals were insufficient medication, alcohol and sleeplessness. The meaning of withdrawal was characterized by a viscous circle. The process starts with the necessesity to avoid external and internal stressors. It continues with changed reality and brooding. Senses of being an outsider are enlarged and the viscous circle is completed with further withdrawal. Psychiatric care is reflected upon as an opportunity for the caregivers to step in early and break up the viscous circle.
|
|
