1. |
|
|
2. |
|
|
3. |
|
|
4. |
|
|
5. |
|
|
6. |
|
|
7. |
|
|
8. |
|
|
9. |
- Andresen, SE, et al.
(författare)
-
Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
- 2003
-
Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 94:6, s. 3990-3994
-
Tidskriftsartikel (refereegranskat)abstract
- We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
|
|
10. |
|
|