| 1. |
- Bi, Zhaoxia, et al.
(författare)
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InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
- 2019
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Ingår i: Nano Letters. - : American Chemical Society. - 1530-6984 .- 1530-6992. ; 19:5, s. 2832-2839
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In 0.09 Ga 0.91 N and 151 meV for In 0.18 Ga 0.82 N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In 0.09 Ga 0.91 N platelets to 1.95 eV on In 0.18 Ga 0.82 N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In 0.18 Ga 0.82 N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In 0.09 Ga 0.91 N platelets and red emission on In 0.18 Ga 0.82 N platelets.
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| 2. |
- Bi, Zhaoxia, et al.
(författare)
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Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
- 2020
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Ingår i: ACS Applied Materials and Interfaces. - : NLM (Medline). - 1944-8244 .- 1944-8252. ; 12:15, s. 17845-17851
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Tidskriftsartikel (refereegranskat)abstract
- In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.
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| 3. |
- Colvin, Jovana, et al.
(författare)
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Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
- 2019
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Ingår i: Physical Review Materials. - : American Physical Society. - 2475-9953. ; 3:9
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present a process of forming monolithic GaN surface from an ordered nanowire array by means of material redistribution. This process, referred to as reformation, is performed in a conventional MOVPE crystal growth system with the gallium supply turned off and allows a crystal nanostructure to change shape according to differences in surface energies between its facets. Using reformation, coalescence may proceed closer to thermodynamic equilibrium, which is required for fabrication of high-quality substrate material. Scanning probe techniques are utilized, complemented by cathodoluminescence and electron microscopy, to investigate structural and electrical properties of the surface after reformation, as well as to assess densities, location, and formation of different types of defects in the GaN film. Spatial variations in material properties such as intrinsic majority-carrier types can be attributed to the radical changes in growth conditions required for sequential transition between nanowire growth, selective shell growth, and reformation. These properties enable us to assess the impact of the process on densities, locations, and formation of different types of dislocations in the GaN film. We find a fraction of the nanowires to comprise of a single electrically neutral edge dislocation, propagating from the GaN buffer, while electrically active dislocations are found at coalesced interfaces between nanowires. By decreasing the mask aperture size and changing the nucleation conditions the prevalence of nanowires comprising edge dislocation was significantly reduced from 6% to 3%, while the density of interface dislocations was reduced from 6×108 to 4×107cm-2. Using a sequential reformation process was found to create inversion domains with low surface potential N-polar regions in an otherwise Ga-polar GaN film. The inversion domains were associated with pinned dislocation pairs, and were further confirmed by selective wet etching in NaOH. This lateral polarity inversion was thoroughly eliminated in samples formed by a continuous reformation process. These results reveal a path and challenges for growing GaN substrates of superior crystal quality through nanowire reformation.
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| 4. |
- Hultin, Olof, et al.
(författare)
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Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
- 2017
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:2, s. 1121-1126
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Tidskriftsartikel (refereegranskat)abstract
- Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires.
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| 5. |
- Jafari Jam, Reza, et al.
(författare)
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Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates
- 2020
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Ingår i: Nanoscale. - Cambridge : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 12:2, s. 888-894
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Tidskriftsartikel (refereegranskat)abstract
- We report on the synthesis of vertical InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour-liquid-solid growth. A thick silicon oxide layer was first deposited on the substrates. The samples were then patterned by electron beam lithography and deep dry etching through the oxide layer down to the substrate surface. Gold seed particles were subsequently deposited in the holes of the pattern by the use of pulse electrodeposition. The subsequent growth of nanowires by the vapour-liquid-solid method was guided towards the [001] direction by the patterned oxide template, and displayed a high growth yield with respect to the array of holes in the template. In order to confirm the versatility and robustness of the process, we have also demonstrated guided growth of InP nanowire p-n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates. Our results show a promising route to monolithically integrate III-V nanowire heterostructure devices with commercially viable (001) silicon platforms.
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| 6. |
- Khalilian, Maryam, et al.
(författare)
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Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
- 2020
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Ingår i: Small. - : Wiley-VCH Verlag. - 1613-6810 .- 1613-6829. ; 16:30
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Tidskriftsartikel (refereegranskat)abstract
- III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substrate leading to high dislocation densities. In order to overcome the issue, efforts have gone into selected area growth of nanowires (NWs), using their small footprint in the substrate to grow virtually dislocation-free material. Their geometry is defined by six tall side-facets and a pointed tip which limits the design of optoelectronic devices. Growth of dislocation-free and atomically smooth 3D hexagonal GaN micro-prisms with a flat, micrometer-sized top-surface is presented. These self-forming structures are suitable for optical devices such as low-loss optical cavities for high-efficiency LEDs. The structures are made by annealing GaN NWs with a thick radial shell, reforming them into hexagonal flat-top prisms with six equivalents either m- or s-facets depending on the initial heights of the top pyramid and m-facets of the NWs. This shape is kinetically controlled and the reformation can be explained with a phenomenological model based on Wulff construction that have been developed. It is expected that the results will inspire further research into micron-sized III-nitride-based devices. © 2020 The Authors.
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| 7. |
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| 8. |
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| 9. |
- Weber, Carsten, et al.
(författare)
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Probing Confined Phonon Modes by Transport through a Nanowire Double Quantum Dot
- 2010
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 104:3, s. 1-036801
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Tidskriftsartikel (refereegranskat)abstract
- Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used as an experimental probe of the confined phonon environment. The resulting discrete peak structure in the measurements is explained by theoretical modeling of the confined phonon mode spectrum, where the piezoelectric coupling is of crucial importance.
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