| 1. |
- Pettersson, Håkan, 1962-, et al.
(författare)
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Nano-Schottky contacts realized by bottom-up technique
- 2010
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Ingår i: Bulletin of American Physical Society. - : American Physical Society.
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Konferensbidrag (refereegranskat)abstract
- Here we present a comprehensive study of a rectifying nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaInAs/InAs nanowire. Selective electrical connections formed by electron beam lithography to the catalytic particle on one side, and to the InAs segment on the other side allowed electrical and optical characterization of the formed Schottky junction. From IV measurements taken at different temperatures we have deduced the Schottky barrier height and the height of the barrier formed in the graded GaInAs nanowire segment. The IV characteristics measured under laser stimulation showed that the device can be used as a unipolar photodetector with extremely small detection volume and potentially ultra fast response.
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| 2. |
- Suyatin, Dmitry, et al.
(författare)
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Nano-Schottky contacts realized by bottom-up technique
- 2010
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Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
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Konferensbidrag (refereegranskat)abstract
- Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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| 3. |
- Borgström, Magnus, et al.
(författare)
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Fabrication and characterization of AlP-GaP core-shell nanowires
- 2011
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 324:1, s. 290-295
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Tidskriftsartikel (refereegranskat)abstract
- We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
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| 6. |
- Caroff, Philippe, et al.
(författare)
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Controlled polytypic and twin-plane superlattices in iii-v nanowires.
- 2009
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Ingår i: Nature Nanotechnology. - : Springer Science and Business Media LLC. - 1748-3395 .- 1748-3387. ; 4:1, s. 50-55
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.
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| 7. |
- Dick Thelander, Kimberly, et al.
(författare)
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Control of III-V nanowire crystal structure by growth parameter tuning
- 2010
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 25:2
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Tidskriftsartikel (refereegranskat)abstract
- In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.
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| 8. |
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| 9. |
- Jain, Vishal, et al.
(författare)
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Study of photocurrent generation in InP nanowire-based p(+)-i-n(+) photodetectors
- 2014
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Ingår i: Nano Reseach. - Beijing & Berlin/Heidelberg : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 7:4, s. 544-552
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Tidskriftsartikel (refereegranskat)abstract
- We report on electrical and optical properties of p(+)-i-n(+)photodetectors/solar cells based on square millimeter arrays of InP nanowires (NWs) grown on InP substrates. The study includes a sample series where the p(+)-segment length was varied between 0 and 250 nm, as well as solar cells with 9.3% efficiency with similar design. The electrical data for all devices display clear rectifying behavior with an ideality factor between 1.8 and 2.5 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p(+)-segment length. Without a p(+)-segment, photogenerated carriers funneled from the substrate into the NWs contribute strongly to the photocurrent. Adding a p(+)-segment decouples the substrate and shifts the depletion region, and collection of photogenerated carriers, to the NWs, in agreement with theoretical modeling. In optimized solar cells, clear spectral signatures of interband transitions in the zinc blende and wurtzite InP layers of the mixed-phase i-segments are observed. Complementary electroluminescence, transmission electron microscopy (TEM), as well as measurements of the dependence of the photocurrent on angle of incidence and polarization, support our interpretations.
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| 10. |
- Johansson, Jonas, et al.
(författare)
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Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires
- 2010
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Ingår i: Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 114:9, s. 3837-3842
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate that the crystal structure of InAs nanowires call be controlled with nanowire diameter and growth temperature. At small diameters, the nanowires exhibit a wurtzite Structure. As the diameter is increased, there is a crossover to the zinc blende structure. The crossover is less sharp at lower growth temperature and L, the crossover diameter decreases as the growth temperature is increased. We explain these results with classical nucleation theory. The strong diameter dependence is accounted for by including the Gibbs-Thomson effect in the chemical potential.
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