| 1. |
- Beck, Marc, et al.
(författare)
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Improving stamps for 10 nm level wafer scale nanoimprint lithography
- 2002
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448
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Tidskriftsartikel (refereegranskat)abstract
- The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
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| 2. |
- Ghatnekar-Nilsson, Sara, et al.
(författare)
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Fabrication and mechanical characterization of ultrashort nanocantilevers
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:5, s. 990-992
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Tidskriftsartikel (refereegranskat)abstract
- Three aspects on nanocantilevers are presented in this letter. First, we present the fabrication process of 2 mum long freestanding chromium cantilevers with width 150 nm, and thickness 50 nm. Second, a measurement scheme using an atomic force microscope operating in contact mode was employed to study the mechanical properties along the length of the cantilevers. Third, we have investigated extremely large deflections on these nanoscale cantilevers demonstrating their high ductility. The spring constants calculated from the experimental data are smaller than expected from classical mechanics calculations, but show good agreement with previously reported calculations for largely deflected beams. (C) 2003 American Institute of Physics.
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| 3. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 4. |
- Timmers, H, et al.
(författare)
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Threshold stoichiometry for beam induced nitrogen depletion of SiN
- 2002
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 190, s. 428-432
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution. nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers. (C) 2002 Published by Elsevier Science B.V.
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