| 1. |
- Song, Yuxin, 1981, et al.
(författare)
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Dilute bismides for near and mid-infrared applications
- 2013
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Ingår i: 2013 15th International Conference on Transparent Optical Networks (ICTON). - 2162-7339. - 9781479906826 ; , s. 6602735-
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Konferensbidrag (refereegranskat)abstract
- Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.
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| 2. |
- Song, Yuxin, 1981, et al.
(författare)
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Growth of GaSb1-xBix by molecular beam epitaxy
- 2012
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Ingår i: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 30:2, s. 02B114-
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Tidskriftsartikel (refereegranskat)abstract
- Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
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| 3. |
- Song, Yuxin, 1981, et al.
(författare)
-
Molecular beam epitaxy growth of InSb1-xBix thin films
- 2013
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 378, s. 323-328
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Tidskriftsartikel (refereegranskat)abstract
- Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
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