| 1. |
- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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| 5. |
- Song, Yuxin, 1981, et al.
(författare)
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Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
- 2009
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:12, s. 123531-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has an opposite effect. The effect is strongly dependent on the grading slope. A moderate In grading slope is preferable for the strain relaxation and the minimization of the negative effect of Si doping. Physical mechanisms are proposed to explain the experimental observations. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.
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| 6. |
- Song, Yuxin, 1981, et al.
(författare)
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Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:9, s. 091903-
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Tidskriftsartikel (refereegranskat)abstract
- Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.
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| 7. |
- Song, Yuxin, 1981, et al.
(författare)
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Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
- 2011
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 323:1, s. 21-25
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Tidskriftsartikel (refereegranskat)abstract
- Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
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| 8. |
- Song, Yuxin, 1981, et al.
(författare)
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Natural patterning of templates on GaAs by formation of cracks
- 2015
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 5:6, s. Art Nr 067146-
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Tidskriftsartikel (refereegranskat)abstract
- Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.
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| 10. |
- Tångring, Ivar, 1978, et al.
(författare)
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A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
- 2009
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
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