| 1. |
|
|
| 2. |
- Pettersson, Håkan, 1962-, et al.
(författare)
-
Assembling ferromagnetic single-electron transistors with atomic force microscopy
- 2016. - 2
-
Ingår i: Nanostructures in Electronics and Photonics. - London : Pan Stanford Publishing. - 9789814241120 - 9789814241106 ; , s. 29-40
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFMassembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision. © 2008 by Taylor & Francis Group, LLC.
|
|
| 3. |
- Pettersson, Håkan, 1962-, et al.
(författare)
-
Nano-Schottky contacts realized by bottom-up technique
- 2010
-
Ingår i: Bulletin of American Physical Society. - : American Physical Society.
-
Konferensbidrag (refereegranskat)abstract
- Here we present a comprehensive study of a rectifying nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaInAs/InAs nanowire. Selective electrical connections formed by electron beam lithography to the catalytic particle on one side, and to the InAs segment on the other side allowed electrical and optical characterization of the formed Schottky junction. From IV measurements taken at different temperatures we have deduced the Schottky barrier height and the height of the barrier formed in the graded GaInAs nanowire segment. The IV characteristics measured under laser stimulation showed that the device can be used as a unipolar photodetector with extremely small detection volume and potentially ultra fast response.
|
|
