| 1. |
- Aberg, D, et al.
(författare)
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Implantation temperature dependent deep level defects in 4H-SiC
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 443-446
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Konferensbidrag (refereegranskat)abstract
- Deep level transient spectroscopy spectra of the near Z-defect region (150-350K) were investigated for B implanted samples of low doses (10(8)-10(9) cm(-2)). For 300 degreesC implantation, a level at an energy of 0.41 eV below the conduction hand edge was found, referred to as the S-level. The S-center was shown to form in both implanted and electron irradiated 4H-SiC, either after room temperature (R.T.) implantation followed by mild heat treatments or lung R.T. storage (several months) or after 200-300 degreesC implantations/irradiations. The S-center was found to anneal out at temperatures above 250 degreesC.
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| 2. |
- Alfieri, G, et al.
(författare)
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Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC
- 2005
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD. - 0878499636 ; , s. 365-368
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Konferensbidrag (refereegranskat)abstract
- Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.
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| 3. |
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| 4. |
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| 5. |
- Bruzzi, M, et al.
(författare)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
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Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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| 6. |
- Christensen, JS, et al.
(författare)
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Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 94:10, s. 6533-6540
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Tidskriftsartikel (refereegranskat)abstract
- Phosphorus diffusion has been studied in relaxed Si1-xGex samples (x=0.11 and 0.19) and strained Si/Si1-xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of -13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1-xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1-xGex. Further, P is found to segregate into Si across Si/Si1-xGex interfaces and the segregation coefficient increases with increasing Ge concentration.
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| 7. |
- Christensen, JS, et al.
(författare)
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Phosphorus and boron diffusion in silicon under equilibrium conditions
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:14, s. 2254-2256
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Tidskriftsartikel (refereegranskat)abstract
- The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 degreesC) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74+/-0.07 eV and a pre-exponential factor of (8+/-5)x10(-4) cm(2)/s. In the temperature range of 810 to 1050 degreesC, boron was found to diffuse with an activation energy of 3.12+/-0.04 eV and a pre-exponential factor of 0.06+/-0.02 cm(2)/s. These results differ from those of many previous studies, but this deviation may to a large extent be attributed to slow transients before equilibrium concentrations of point defects are established at temperatures below similar to1000 degreesC. Despite a similar diffusion mechanism mediated by Si self-interstitials, P exhibits a lower activation energy than B because of stronger bonding to the Si self-interstitial.
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| 8. |
- DOYLE, JP, et al.
(författare)
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MORPHOLOGICAL INSTABILITY OF BILAYERS OF COPPER GERMANIDE FILMS AND AMORPHOUS-GERMANIUM
- 1995
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Ingår i: APPLIED PHYSICS LETTERS. - : AMER INST PHYSICS. - 0003-6951. ; 67:19, s. 2804-2806
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The morphological instability of copper germanide (Cu3Ge) films in contact with amorphous germanium is reported. Through secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and electrical measurements, the breakdown of th
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| 9. |
- Hallen, A, et al.
(författare)
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Damage evolution in Al-implanted 4H SiC
- 2000
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 869-872
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Tidskriftsartikel (refereegranskat)abstract
- The build-up of damage in 4H SiC epitaxial layers implanted with 100 or 180 keV Al ions in the dose range of 10(13) to 10(15) cm(-2) has been studied by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy in the channeling mode (c-RBS). Implantations have been done at temperatures between room temperature and 800 degreesC and the samples have been analysed after implantation and after post implant anneals. In as implanted samples channeling results show that a major part of the damage can be avoided already at implantations at 200 degreesC, but complete removal of damage is not possible even at an implantation temperature of 800 degreesC. After post implant annealing at typically 1600 degreesC a distribution of planar faults are seen by TEM. The size is around 10 nm, but increases with increasing annealing temperature.
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| 10. |
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