| 1. |
- Ahlberg, Erik, et al.
(författare)
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"Vi klimatforskare stödjer Greta och skolungdomarna"
- 2019
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Ingår i: Dagens nyheter (DN debatt). - 1101-2447.
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- DN DEBATT 15/3. Sedan industrialiseringens början har vi använt omkring fyra femtedelar av den mängd fossilt kol som får förbrännas för att vi ska klara Parisavtalet. Vi har bara en femtedel kvar och det är bråttom att kraftigt reducera utsläppen. Det har Greta Thunberg och de strejkande ungdomarna förstått. Därför stödjer vi deras krav, skriver 270 klimatforskare.
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| 2. |
- Almqvist, Erik, et al.
(författare)
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Increased plasma concentrations of N-terminal pro-B-type natriuretic peptide in patients with mild primary hyperparathyroidism.
- 2006
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Ingår i: Clinical endocrinology. - : Wiley. - 0300-0664 .- 1365-2265. ; 65:6, s. 760-6
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Tidskriftsartikel (refereegranskat)abstract
- OBJECTIVE: Primary hyperparathyroidism (PHPT) is associated with heart disease. The aims of the present study were to evaluate how cardiac function and secretion of N-terminal pro-B-type natriuretic peptide (NT-proBNP) correlate in patients with mild PHPT, and how the plasma level of NT-proBNP is influenced by cure of the parathyroid disease. DESIGN AND PATIENTS: Forty-two patients with PHPT without symptoms of heart disease were examined before and 1 year after curative parathyroidectomy. MEASUREMENTS: Plasma or serum concentrations of NT-proBNP, calcium, PTH, creatinine, oestradiol, testosterone and SHBG were measured. Cardiac function was evaluated by equilibrium radionuclide angiography (ERNA). RESULTS: At baseline, NT-proBNP levels correlated negatively with systolic function [left ventricular ejection fraction (LVEF), P < 0.001]. Twelve per cent of the patients had NT-proBNP levels above normal reference values preoperatively. One year postoperatively, the corresponding proportion was 21%. The mean plasma concentration of NT-proBNP increased after parathyroidectomy (P < 0.01) in parallel with a dip in diastolic function (peak filling rate, P < 0.05) and a falling trend in systolic function (LVEF, P = 0.08). The postoperative percentage changes in circulating NT-proBNP and total oestradiol correlated positively (P < 0.05). CONCLUSIONS: Patients with mild PHPT and normal renal function may have high levels of circulating NT-proBNP despite the absence of symptomatic heart disease. Cure of the parathyroid disease is followed by a further increase in NT-proBNP secretion in parallel with ERNA measures, indicating subclinical changes in heart function. These results are in line with data indicating an association between PHPT and increased risk of premature death.
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| 3. |
- Babadi, Aein S., et al.
(författare)
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Impact of doping and diameter on the electrical properties of GaSb nanowires
- 2017
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 110:5
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Tidskriftsartikel (refereegranskat)abstract
- The effect of doping and diameter on the electrical properties of vapor-liquid-solid grown GaSb nanowires was characterized using long channel back-gated lateral transistors and top-gated devices. The measurements showed that increasing the doping concentration significantly increases the conductivity while reducing the control over the channel potential and shifting the threshold voltage, as expected. The highest average mobility was 85 cm2/V·s measured for an unintentionally doped GaSb nanowire with a diameter of 45 nm, whereas medium doped nanowires with large diameters (81 nm) showed a value of 153 cm2/V·s. The mobility is found to be independent of nanowire diameter in the range of 36 nm-68 nm, while the resistivity is strongly reduced with increasing diameter attributed to the surface depletion of charge carriers. The data are in good agreement with an analytical calculation of the depletion depth. A high transconductance was achieved by scaling down the channel length to 200 nm, reaching a maximum value of 80 μS/μm for a top-gated GaSb nanowires transistor with an ON-resistance of 26 kΩ corresponding to 3.9 Ω.mm. The lowest contact resistance obtained was 0.35 Ω·mm for transistors with the highest doping concentration.
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| 4. |
- Berg, Martin, et al.
(författare)
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A transmission line method for evaluation of vertical InAs nanowire contacts
- 2015
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 107:23
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific contact resistance values reaching down to below 1 Omega mu m(2). (C) 2015 AIP Publishing LLC.
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| 5. |
- Berg, Martin, et al.
(författare)
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Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- 2016
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 37:8, s. 966-969
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Tidskriftsartikel (refereegranskat)abstract
- Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.
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| 6. |
- Berg, Martin, et al.
(författare)
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Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- 2016
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Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 9781467398930 ; 2016-February
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Konferensbidrag (refereegranskat)abstract
- In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
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| 7. |
- Carlsson, Georg, et al.
(författare)
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Perennial species mixtures for multifunctional production of biomass on marginal land
- 2017
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Ingår i: GCB Bioenergy. - : Wiley. - 1757-1693 .- 1757-1707. ; 9:1, s. 191-201
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Tidskriftsartikel (refereegranskat)abstract
- Multifunctional agriculture provides noncommodity functions and services along with food, feed and bioenergy feedstocks, for example by preserving or promoting biodiversity, improving soil fertility, mitigating climate change and environmental degradation, and contributing to the socio-economic viability of rural areas. Producing biomass for bioenergy from low-input perennial species mixtures on marginal land has the potential to support biodiversity and soil carbon sequestration in synergy with greenhouse gas mitigation. We compared biomass production in species-rich mixtures of perennial grasses, legumes and forbs with pure-stand grasses and relatively species-poor mixtures under different nitrogen fertilization regimes. Field experiments were performed on different types of marginal land, that is agricultural field margins and land with poor soil fertility, at four sites in southernmost and western Sweden. Biomass production was measured for three years in perennial grasses grown as pure stands, in legume-grass mixtures, and legume-grass-forb mixtures across a species richness gradient. In unfertilized species-rich mixtures, average biomass yields per experimental site and year were in the range from 3 to 9 metric ton DM ha−1 yr−1. While the most productive pure-stand grasses fertilized with 60–120 kg N ha−1 yr−1 often produced higher biomass yields than unfertilized mixtures, these differences were generally smaller than the variations between years and sites. Calculations of climate impact using the harvested biomass for conversion to biogas as vehicle fuel showed that the average greenhouse gas emissions per energy unit were about 50% lower in unfertilized systems than in treatments fertilized with 100–120 kg N ha−1 yr−1. Our findings thereby show that unfertilized species-rich perennial plant mixtures on marginal land provide resource-efficient biomass production and contribute to the mitigation of climate change. Perennial species mixtures managed with low inputs thus promote synergies between productivity and biodiversity in the perspective of climate-smart and multifunctional biomass production.
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| 8. |
- Chen, X., et al.
(författare)
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A genome-wide association study of IgM antibody against phosphorylcholine: shared genetics and phenotypic relationship to chronic lymphocytic leukemia
- 2018
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Ingår i: Human Molecular Genetics. - : Oxford University Press (OUP). - 0964-6906 .- 1460-2083. ; 27:10, s. 1809-1818
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Tidskriftsartikel (refereegranskat)abstract
- Phosphorylcholine (PC) is an epitope on oxidized low-density lipoprotein (oxLDL), apoptotic cells and several pathogens like Streptococcus pneumoniae. Immunoglobulin M against PC (IgM anti-PC) has the ability to inhibit uptake of oxLDL by macrophages and increase clearance of apoptotic cells. From our genome-wide association studies (GWASs) in four European-ancestry cohorts, six single nucleotide polymorphisms (SNPs) in 11q24.1 were discovered (in 3002 individuals) and replicated (in 646 individuals) to be associated with serum level of IgM anti-PC (the leading SNP rs35923643-G, combined beta = 0.19, 95% confidence interval 0.13-0.24, P = 4.3 x 10-11). The haplotype tagged by rs35923643-G (or its proxy SNP rs735665-A) is also known as the top risk allele for chronic lymphocytic leukemia (CLL), and a main increasing allele for general IgM. By using summary GWAS results of IgM anti-PC and CLL in the polygenic risk score (PRS) analysis, PRS on the basis of IgM anti-PC risk alleles positively associated with CLL risk (explained 0.6% of CLL variance, P = 1.2 x 10-15). Functional prediction suggested that rs35923643-G might impede the binding of Runt-related transcription factor 3, a tumor suppressor playing a central role in the immune regulation of cancers. Contrary to the expectations from the shared genetics between IgM anti-PC and CLL, an inverse relationship at the phenotypic level was found in a nested case-control study (30 CLL cases with 90 age- and sex-matched controls), potentially reflecting reverse causation. The suggested function of the top variant as well as the phenotypic association between IgM anti-PC and CLL risk needs replication and motivates further studies.
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| 9. |
- Dey, Anil, et al.
(författare)
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Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
- 2013
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:12, s. 5919-5924
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Tidskriftsartikel (refereegranskat)abstract
- The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit. The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties. In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects, however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak current, Jpeak = 2310 kA/cm2, than the maximum peak current of axial GaSb/InAs(Sb) Esaki diodes per unit chip area. The radial TFETs also deliver high peak current densities Jpeak = 1210 kA/cm2 while their axial counterparts at most carry Jpeak = 77 kA/cm2, normalized to the largest cross-sectional area of the nanowire.
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| 10. |
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