| 1. |
- Belitsky, Victor, 1955, et al.
(författare)
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Facility Heterodyne Receiver for the Atacama Pathfinder Experiment Telescope
- 2007
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Ingår i: Proceedings of Joint 32nd International Conference on Infrared Millimeter Waves and 15th International conference on Terahertz Electronics, Sept 3-7, 2007, City Hall, Cardiff, Wales, UK. ; , s. 326-328
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Konferensbidrag (refereegranskat)
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| 2. |
- Berg, Martin, et al.
(författare)
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Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- 2016
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Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 9781467398930 ; 2016-February
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Konferensbidrag (refereegranskat)abstract
- In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
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| 3. |
- Bertilsson, Erik, et al.
(författare)
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Use of digital human modelling and consideration of anthropometric diversity in Swedish industry
- 2010
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Ingår i: Proceedings of the 42nd annual Nordic Ergonomic Society Conference. - 9788299574723
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Konferensbidrag (refereegranskat)abstract
- This paper study and clarify problems, needs and opportunities when working with anthropometric diversity in digital human modelling (DHM) systems. A comparison between product development and production development in Swedish automotive industry is made. Interviews with DHM users and ergonomics specialists about their way of working with anthropometric diversity confirmed that simulations are often done with only one or a few human models. The reason for this is claimed to be time consuming processes, both at the creation of the human model but mainly when correctly positioning the model in the CAD environment.
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| 4. |
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| 5. |
- Dey, Anil, et al.
(författare)
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GaSb nanowire pFETs for III-V CMOS
- 2013
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Ingår i: IEEE Device Research Conference. Proceedings. - 1548-3770. ; , s. 13-14
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Konferensbidrag (refereegranskat)
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| 6. |
- Froitzheim, Jan, 1981, et al.
(författare)
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Chromium evaporation of Coated and uncoated FE-22CR steels investigated by a novel denuder technique
- 2009
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Ingår i: 3rd European Fuel Cell Technology and Applications - Piero Lunghi Conference, EFC 2009; Rome; Italy; 15 December 2009 through 18 December 2009. - 9788882862114 ; , s. 77-78
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Konferensbidrag (refereegranskat)abstract
- The formation of volatile chromium species is a major problem concerning metallic interconnects for Solid Oxide Fuel Cells (SOFC). This problem is known and a number of routes, usually in the form of coatings, has been presented to overcome this problem. This paper investigates the influence of thin metallic films which can be applied by a low cost process. The measurements are carried out by a novel denuder technique where volatile chromium species are collected as sodium chromate. This technique allows the quantification of chromium evaporation in a time resolved manner. Coated and uncoated samples of ferritic steels developed for SOFC applications are investigated at 850°C in a N2-O2-H2O environment.
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| 7. |
- Froitzheim, Jan, 1981, et al.
(författare)
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Cr evaporation of metallic interconnects: A novel method for quantification
- 2009
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566777391 ; 25:2 PART 2, s. 1423-1428
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Konferensbidrag (refereegranskat)abstract
- Chromium evaporation from metallic interconnects in SOFCs is commonly poisoning the cathode of SOFCs. To reduce chromium evaporation, rather thick coatings have been deposited using various coating techniques. In this study, a 22% Cr ferritic steel has been coated with thin films (
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| 8. |
- Fröberg, Linus, et al.
(författare)
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Vertical InAs nanowire wrap-gate FETs
- 2006
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Ingår i: Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006).
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Konferensbidrag (refereegranskat)
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| 9. |
- Hellenbrand, Markus, et al.
(författare)
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Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
- 2019
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We compare III-V nanowire (NW) metal-oxidesemiconductor field-effect transistors (MOSFETs) in a vertical gate-all-around (GAA) as well as a lateral trigate architecture with planar reference MOSFETs and reveal that the NW geometry does not deteriorate the low-frequency noise (LFN) performance. In fact, with gate oxides deposited at the same conditions, the NW structures show potential to achieve better metrics due to slightly lower border trap densities Nbt. The normalized LFN in transistors with a higher number of NW can degrade due to averaging effects between individual nanowires within the same device.
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| 10. |
- Hellenbrand, Markus, et al.
(författare)
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Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
- 2018
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Ingår i: 2018 76th Device Research Conference (DRC). - 9781538630280 ; , s. 137-138
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.
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