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Sökning: WFRF:(Szymczak A.) > Szymczak R.

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1.
  • Wosinski, T., et al. (författare)
  • Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
  • 2007
  • Ingår i: Physica Status Solidi. A, Applied Research. - : Wiley. - 0031-8965. ; 204:2, s. 472-476
  • Tidskriftsartikel (refereegranskat)abstract
    • Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.
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2.
  • Wosinski, T., et al. (författare)
  • Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures
  • 2008
  • Ingår i: Materials Sceince - Poland. - 0137-1339 .- 2083-134X. ; 26:4, s. 1097-1104
  • Konferensbidrag (refereegranskat)abstract
    • Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.
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3.
  • Babonas, G. J., et al. (författare)
  • Optical properties of Fe-doped silica films on Si
  • 2006
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5391-5394
  • Tidskriftsartikel (refereegranskat)abstract
    • Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO2:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl3-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.
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4.
  • Yastrubchak, O., et al. (författare)
  • Influence of Ion Implantation on Magnetic, Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
  • 2008
  • Ingår i: ACTA PHYSICA POLONICA A. - 0587-4246. ; 114:5, s. 1445-1450
  • Konferensbidrag (refereegranskat)abstract
    • We performed implantation experiments; applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen and neon implantation.
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5.
  • Yastrubchak, O., et al. (författare)
  • Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
  • 2010
  • Ingår i: Journal Of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 39:6, s. 794-798
  • Konferensbidrag (refereegranskat)abstract
    • Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.
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  • Resultat 1-5 av 5

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