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Sökning: WFRF:(Torres M) > Doktorsavhandling

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1.
  • Högström, Herman, 1975- (författare)
  • Optical Studies of Periodic Microstructures in Polar Materials
  • 2006
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • The optical properties of matter are determined by the coupling of the incident electromagnetic radiation to oscillators within the material. The oscillators can be electrons, ions or molecules. Close to a resonance the dielectric function exhibits strong dispersion and may be negative. A negative dielectric function gives rise to a complex wave vector which is associated with no allowed states for photons, i.e. high extinction and bulk reflectance, as well as the possibility to support surface waves. It is possible to manufacture a dielectric material that generates a complex wave vector. Such materials are called photonic crystals and they may exhibit a frequency range without allowed states for photons, i.e. an energy gap. A photonic crystal has a periodically varying dielectric function and the lattice constant is of the same order of magnitude as the wavelengths of the gap. In this thesis, two optical phenomena causing a complex wave vector are combined. Polar materials, which have lattice resonance in the thermal infrared causing strong dispersion, are studied in combination with a periodic structure. The periodicity introduced is achieved using another material, but also by structuring of the polar material. One, two and three dimensional structures are considered. The polar materials used are silicon dioxide and silicon carbide. It is shown, both by calculations and experiments that the two optical phenomena can co-exist and interact, both constructively and destructively. A possible application for the combination of the two phenomena is discussed: Selective emittance in the thermal infrared. It is also shown that a polar material can be periodically structured by a focused ion beam in such way that it excites surface waves.
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2.
  • Naureen, Shagufta (författare)
  • Top-down Fabrication Technologies for High Quality III-V Nanostructures
  • 2013
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. For processing of semiconductor nanostructure devices, simplicity, cost effectiveness, and device efficiency are key factors. A number of methods are being pursued to fabricate high quality III-V nanopillar/nanowires, quantum dots and nano disks. Further, high optical quality nanostructures in these materials together with precise control of shapes, sizes and array geometries make them attractive for a wide range of optoelectronic/photonic devices.This thesis work is focused on top-down approaches for fabrication of high optical quality nanostructures in III-V materials. Dense and uniform arrays of nanopillars are fabricated by dry etching using self-assembly of colloidal SiO2 particles for masking. The physico-chemistry of etching and the effect of etch-mask parameters are investigated to control the shape, aspect ratios and spatial coverage of the nanopillar arrays. The optimization of etch parameters and the utilization of erosion of etch masks is evaluated to obtain desired pillar shapes from cylindrical to conical. Using this fabrication method, high quality nanopillar arrays were realized in several InP-based and GaAs-based structures, including quantum wells and multilayer heterostructures. Optical properties of these pillars are investigated using different optical spectroscopic techniques. These nanopillars, single and in arrays, show excellent photoluminescence (PL) at room temperature and the measured PL line-widths are comparable to the as-grown wafer, indicating the high quality of the fabricated nanostructures. The substrate-free InP nanopillars have carrier life times similar to reference epitaxial layers, yet an another indicator of high material quality. InGaAs layer, beneath the pillars is shown to provide several useful functions. It effectively blocks the PL from the InP substrate, serves as a sacrificial layer for generation of free pillars, and as a “detector” in cathodoluminescence (CL) measurements. Diffusion lengths independently determined by time resolved photoluminescence (TRPL) and CL measurements are consistent, and carrier feeding to low bandgap InGaAs layer is evidenced by CL data. Total reflectivity measurements show that nanopillar arrays provide broadband antireflection making them good candidates for photovoltaic applications.  A novel post etch, sulfur-oleylamine (S-OA) based chemical process is developed to etch III-V materials with monolayer precision, in an inverse epitaxial manner along with simultaneous surface passivation. The process is applied to push the limits of top-down fabrication and InP-based high optical quality nanowires with aspect ratios more than 50, and nanostructures with new topologies (nanowire meshes and in-plane wires) are demonstrated.  The optimized process technique is used to fabricate nanopillars in InP-based multilayers (InP/InGaAsP/InP and InP/InGaAs/InP). Such multilayer nanopillars are not only attractive for broad-band absorption in solar cells, but are also ideal to generate high optical quality nanodisks of these materials. Finally, the utility of a soft stamping technique to transfer free nanopillars/wires and nanodisks onto Si substrate is demonstrated. These nanostructures transferred onto Si with controlled densities, from low to high, could provide a new route for material integration on Si.
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