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Toward silicon-based lasers for terahertz sources

Lynch, S.A. (author)
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
Paul, D.J. (author)
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
Townsend, P. (author)
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
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Matmon, G. (author)
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
Suet, Z. (author)
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
Kelsall, R.W. (author)
School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
Ikonic, Z. (author)
School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
Harrison, P. (author)
School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
Zhang, J. (author)
Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom
Norris, D.J. (author)
School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom
Cullis, A.G. (author)
School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom
Pidgeon, C.R. (author)
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
Murzyn, P. (author)
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
Murdin, B. (author)
School of Electronics and Physical Sciences, University of Surrey, Surrey GU2 7XH, United Kingdom
Bain, M. (author)
School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom
Gamble, H.S. (author)
School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom
Zhao, Ming (author)
Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
Ni, Wei-Xin (author)
Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
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 (creator_code:org_t)
2006
2006
English.
In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 12:6, s. 1570-1577
Related links:
https://urn.kb.se/re...
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https://doi.org/10.1...
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.

Keyword

Boron
Far infrared
Germanium
Impurity
Lifetime
Phosphorus
Pump-probe
Quantum cascade laser
Resonant tunneling diode (RTD)
Silicon
Suicide
Terahertz
Waveguide
TECHNOLOGY
TEKNIKVETENSKAP

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art (subject category)

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