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Europium doping of ...
Europium doping of zincblende GaN by ion implantation
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- Lorenz, K (författare)
- Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
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- Roqan, I. S. (författare)
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
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- Franco, N (författare)
- Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
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- O´Donnell, K. P. (författare)
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Alves, E (författare)
- Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
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- Trager-Cowan, C (författare)
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
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- Martin, R.W. (författare)
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
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- As, D. J. (författare)
- Department of Physics, University of Paderborn, 33098 Paderborn, Germany
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- Panfilova, M (författare)
- Department of Physics, University of Paderborn, 33098 Paderborn, Germany
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Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom (creator_code:org_t)
- AIP Publishing, 2009
- 2009
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 105:11, s. 113507-
- Relaterad länk:
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https://strathprints...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the 〈110〉 direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.
Nyckelord
- annealing
- cathodoluminescence
- europium
- gallium compounds
- III-V semiconductors
- ion implantation
- lattice constants
- molecular beam epitaxial growth
- photoluminescence
- Rutherford backscattering
- semiconductor doping
- semiconductor thin films
- wide band gap semiconductors
- X-ray diffraction
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Lorenz, K
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Roqan, I. S.
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Franco, N
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O´Donnell, K. P.
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Darakchieva, Van ...
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Alves, E
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visa fler...
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Trager-Cowan, C
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Martin, R.W.
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As, D. J.
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Panfilova, M
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visa färre...
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