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- Tuomisto, F, et al.
(författare)
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Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy
- 2003
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Ingår i: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics. - 0587-4246. ; 103:6, s. 601-606
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Tidskriftsartikel (refereegranskat)abstract
- Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.
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