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Träfflista för sökning "WFRF:(Vassilev Vessen 1969) ;pers:(Carpenter Sona 1983)"

Sökning: WFRF:(Vassilev Vessen 1969) > Carpenter Sona 1983

  • Resultat 1-6 av 6
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1.
  • Carpenter, Sona, 1983, et al. (författare)
  • A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology
  • 2018
  • Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241
  • Tidskriftsartikel (refereegranskat)abstract
    • A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
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2.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver
  • 2020
  • Ingår i: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 10:3, s. 321-330
  • Tidskriftsartikel (refereegranskat)abstract
    • This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in a fully integrated receiver (Rx) module at the D -band (110–170 GHz). The solution consists of an MMIC-to-waveguide transition realized using an on-chip probe mounted in the E -plane of a split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from the waveguide to the probe. The transition's performance is experimentally verified using a back-to-back test chip, and measurement results show that the proposed packaging solution achieves a low insertion loss of only 0.7 dB and covers a very wide frequency range extending from 105 to 175 GHz. The proposed transition is also integrated with an in-phase/quadrature-phase (I/Q) Rx on the same chip. The Rx is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology and consists of a low-noise amplifier, an I/Q mixer, and a frequency tripler. Measurement results show that the Rx module achieves an average conversion gain of 23 dB across the frequency range of 110–145 GHz and has an average noise figure of 10.6 dB. The Rx MMIC has a dc power consumption of 440 mW and occupies an area of 1.6 × 1.6 mm 2 . This article addresses one of the main challenges in systems operating above 100 GHz and presents a fully integrated packaging solution that suits large integrated circuits and does not require any galvanic contacts nor impose any limitations on MMIC dimensions.
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3.
  • He, Zhongxia Simon, 1984, et al. (författare)
  • A 90-140 GHz, High Power Frequency Source Packaged in a Self-aligned Waveguide Module
  • 2018
  • Ingår i: Asia Pacific Microwave Conference-Proceedings. - 9784902339451 ; , s. 261-263
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a solution for packaging monolithic microwave integrated circuit (MMIC) using commercially available liquid crystal polymer (LCP) substrate print circuit board. This package solution comprises of a novel self-aligned microstrip-to-waveguide transition design. For demonstration, an active frequency multiplier-by three MMIC at F-band (90-140 GHz) is packaged into a split-block waveguide module and tested. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The tripler module has measured output power of 10.6 dBm and a 3-dB output bandwidth of 36.3%, (90-130 GHz). Total power consumption is 156 mW at 2-dBm input power.
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4.
  • Vassilev, Vessen, 1969, et al. (författare)
  • Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission
  • 2018
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781538650677 ; , s. 1523-1526
  • Konferensbidrag (refereegranskat)abstract
    • This manuscript presents results of wireless real-time data transmission at 143 GHz. The transmitter/receiver (Tx/Rx) front-end circuitry is integrated on a single monolithic microwave integrated circuits (MMICs), realized in a 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The Tx module shows gain of 12 dB at 143 GHz with output power of -2.3 dBm at 1 dB gain compression. The Rx module has a gain of 15 dB with noise figure (NF) of 13 dB at 143 GHz. The minimum NF of 10 dB is measured at 132 GHz. The Tx/Rx front-end modules were integrated in two radio units to demonstrate a real time wireless data transmission. At a distance of 10 m and using 40 dBi gain antennas, the highest data rate achieved was 5.3 Gbit/s using 64 QAM modulation over a 1 GHz channel with spectrum efficiency of 5bit/s/Hz.
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5.
  • Zirath, Herbert, 1955, et al. (författare)
  • D-band MMIC design for high datarate wireless and wire-bound communication based on state-of-the-art InP DHBT and SiGe BiCMOS processes
  • 2018
  • Ingår i: Asia Pacific Microwave Conference-Proceedings. - 9784902339451 ; , s. 246-248
  • Konferensbidrag (refereegranskat)abstract
    • This papers describes ongoing work to demonstrate high datarate wireless and wireline communication based on InP DHBT and SiGe BiCMOS MMIC-technologies. A RX/TX chipset was developed at D-band (110-170 GHz) and wireless and wireline communication up to 48 Gbps was demonstrated with QPSK-modulation. Error free communication with 7 bit/symbol was demonstrated at 870 MBaud symbolrate in a 1 GHz wide channel. Recently developed MMICs for communication applications, working in G-band and H-band are presented.
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6.
  • Zirath, Herbert, 1955, et al. (författare)
  • Multifunction MMICs for high datarate wireless and optical communication based on state-of-The-Art InP DHBT and SiGe BiCMOS processes
  • 2018
  • Ingår i: MIKON 2018 - 22nd International Microwave and Radar Conference. ; , s. 230-233
  • Konferensbidrag (refereegranskat)abstract
    • This papers describes ongoing work to demonstrate high datarate wireless and wireline communication based on InP DHBT and SiGe BiCMOS MMIC-Technologies. A RX/TX chipset was developed at D-band (110-170 GHz) and wireless and wireline communication up to 48 Gbps was demonstrated with QPSK-modulation. Error free communication with 7 bit/symbol was demonstrated at 870 MBaud symbolrate in a 1 GHz wide channel. Recently developed MMICs for communication applications, working in G-band and H-band are presented.
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  • Resultat 1-6 av 6

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