| 1. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
- 2018
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 390-393
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Konferensbidrag (refereegranskat)abstract
- This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
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| 2. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology
- 2017
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Ingår i: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512
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Konferensbidrag (refereegranskat)abstract
- This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
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| 3. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures
- 2021
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 31:1, s. 9-12
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to a quarter-wavelength cavity, which in turn couples to either a waveguide (WG) or another chip. The solution also uses a periodic electromagnetic bandgap (EBG) structure that controls the electromagnetic wave and prevents field leakage in undesired directions. The proposed solution is fabricated and demonstrated at the D-band (110-170 GHz), and the measurement results show that it achieves a minimum insertion loss of 0.8 and a 3-dB bandwidth extending from 124 to 161 GHz. The proposed approach does not require any galvanic contacts and can be used for packaging integrated circuits in WG modules as well as for chip-to-chip communication.
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| 4. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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D-band waveguide-to-microstrip transition implemented in eWLB packaging technology
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:4, s. 187-
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Tidskriftsartikel (refereegranskat)abstract
- This Letter presents a non-galvanic D-band (110-170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The interconnect consists of a patch-radiator-based waveguide transition implemented using one of the technology's redistribution layers. The patch radiates to a WR-6.5 standard waveguide perpendicular to its plane. An electromagnetic band-gap structure realised by metal patches is used to suppress undesired modes and improve the performance of the transition. The proposed solution is experimentally verified, and measurement results show that the transition exhibits an average insertion loss of 2 dB across the frequency range 122-146 GHz which, to the best of the authors' knowledge, is the lowest reported loss for a D-band packaging solution in eWLB technology and hence addresses one of the main integration challenges facing millimetre-wave systems.
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| 5. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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D-band Waveguide Transition Based on Linearly Tapered Slot Antenna
- 2017
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Ingår i: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac). - 9781538630556 ; , s. 64-67
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Konferensbidrag (refereegranskat)abstract
- In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110-170 GHz. The average return loss of the transition is -15 dB and the minimum is -9 dB. The structure occupies an area of 0.82x0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.
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| 6. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Demonstration of +100-GHz Interconnects in eWLB Packaging Technology
- 2019
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 9:7, s. 1406-1414
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The interconnects operate at D-band (110–170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. The interconnects rely on implementing radiating structures on the technology’s redistribution layers instead of using conventional ball grid arrays for the transmission of the RF signal to/from the package. The interconnects interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic contacts with the waveguide. The interconnects achieve a measured insertion loss of 2.8 dB over a bandwidth of 33%. The adopted eWLB packaging technology is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This paper proposes cost-effective high-performance interconnects for THz integration, thus addressing one of the main challenges facing systems operating beyond 100 GHz.
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| 7. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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F-band Low-loss Tapered Slot Transition for Millimeter-wave System Packaging
- 2019
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Ingår i: 2019 49th European Microwave Conference, EuMC 2019. - 9782874870552 ; , s. 432-435
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Konferensbidrag (refereegranskat)abstract
- This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized using a Linearly Tapered Slot (LTS) implemented in a commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. The LTS is mounted in the E-plane of a split-block waveguide module and fed through a microstrip line. The transition is experimentally verified using a back-to-back test structure and it exhibits an average insertion loss of 1.7 dB over the frequency range extending from 100 to 135 GHz. This work presents an on-chip packaging technique to realize the interface between MMICs and standard waveguides at millimeter-wave (mmW) frequencies and hence addressing one of the main integration challenging facing systems operating at that range.
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| 8. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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G-band Frequency Converters in 130-nm InP DHBT Technology
- 2021
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Ingår i: 2020 50th European Microwave Conference, EuMC 2020. ; , s. 1027-1030
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design and characterisation of a two G-band (140 - 220 GHz) fundamental mixers. The mixers are implemented in a 130-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. First, a passive double balanced topology was investigated using a diode ring with balanced RF and LO ports. The mixer operates in both upconversion and downconversion modes. In order to reduce the power requirement on the local oscillator (LO) at G-band, the diodes were dc biased. Measurement results show that the mixer has an average conversion loss of 12.4 and 14 dB for upconversion and downconversion modes respectively and covers the frequency range extending from 180 to 194 GHz. The mixer exhibits an LO-RF isolation of 21 dB and requires an LO power of +2 dBm. An upconverting transconductance mixer topology was also investigated using the same technology. Measurement results show that the mixer has an average conversion gain of 1 dB over the frequency range of 171 to 220 GHz. The mixer operates as an upconverter and requires a low LO power of only -4 dBm.
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| 9. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver
- 2020
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 10:3, s. 321-330
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Tidskriftsartikel (refereegranskat)abstract
- This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in a fully integrated receiver (Rx) module at the D -band (110–170 GHz). The solution consists of an MMIC-to-waveguide transition realized using an on-chip probe mounted in the E -plane of a split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from the waveguide to the probe. The transition's performance is experimentally verified using a back-to-back test chip, and measurement results show that the proposed packaging solution achieves a low insertion loss of only 0.7 dB and covers a very wide frequency range extending from 105 to 175 GHz. The proposed transition is also integrated with an in-phase/quadrature-phase (I/Q) Rx on the same chip. The Rx is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology and consists of a low-noise amplifier, an I/Q mixer, and a frequency tripler. Measurement results show that the Rx module achieves an average conversion gain of 23 dB across the frequency range of 110–145 GHz and has an average noise figure of 10.6 dB. The Rx MMIC has a dc power consumption of 440 mW and occupies an area of 1.6 × 1.6 mm 2 . This article addresses one of the main challenges in systems operating above 100 GHz and presents a fully integrated packaging solution that suits large integrated circuits and does not require any galvanic contacts nor impose any limitations on MMIC dimensions.
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| 10. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Packaging Technique of Highly Integrated Circuits Based on EBG Structure for +100 GHz Applications
- 2020
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Ingår i: 14th European Conference on Antennas and Propagation, EuCAP 2020.
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Konferensbidrag (refereegranskat)abstract
- This work presents an on-chip packaging concept suitable for monolithic microwave integrated circuits (MMIC) operating above 100 GHz. The concept relies on using an on-chip transition that couples the signal to a standard air-filled waveguide. The proposed solution utilizes an electromagnetic band-gap (EBG) structure realized using bed of nails to prevent the propagation of parallel plate modes and improve the coupling between the MMIC and the waveguide. The technique shows an average insertion loss of only 0.6 dB across the frequency range 110 - 155 GHz. Moreover, the concept is demonstrated in a D-band amplifier circuitry that is fabricated in an indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Experimental results show that the amplifier exhibits a maximum gain of 18.5 dB with no sign of propagation of any parallel plate modes. This work presents a verified solution for packaging high-frequency integrated circuits, and hence paves the way towards higher system integration above 100 GHz.
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