| 1. |
- Carpenter, Sona, 1983, et al.
(author)
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A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology
- 2018
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In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241
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Journal article (peer-reviewed)abstract
- A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
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| 2. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
- 2018
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In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018, s. 390-393
-
Conference paper (peer-reviewed)abstract
- This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
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| 3. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology
- 2017
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In: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512
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Conference paper (peer-reviewed)abstract
- This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
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| 4. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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D-band waveguide-to-microstrip transition implemented in eWLB packaging technology
- 2020
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:4, s. 187-
-
Journal article (peer-reviewed)abstract
- This Letter presents a non-galvanic D-band (110-170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The interconnect consists of a patch-radiator-based waveguide transition implemented using one of the technology's redistribution layers. The patch radiates to a WR-6.5 standard waveguide perpendicular to its plane. An electromagnetic band-gap structure realised by metal patches is used to suppress undesired modes and improve the performance of the transition. The proposed solution is experimentally verified, and measurement results show that the transition exhibits an average insertion loss of 2 dB across the frequency range 122-146 GHz which, to the best of the authors' knowledge, is the lowest reported loss for a D-band packaging solution in eWLB technology and hence addresses one of the main integration challenges facing millimetre-wave systems.
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| 5. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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D-band Waveguide Transition Based on Linearly Tapered Slot Antenna
- 2017
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In: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac). - 9781538630556 ; , s. 64-67
-
Conference paper (peer-reviewed)abstract
- In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110-170 GHz. The average return loss of the transition is -15 dB and the minimum is -9 dB. The structure occupies an area of 0.82x0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.
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| 6. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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Demonstration of +100-GHz Interconnects in eWLB Packaging Technology
- 2019
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In: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 9:7, s. 1406-1414
-
Journal article (peer-reviewed)abstract
- This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The interconnects operate at D-band (110–170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. The interconnects rely on implementing radiating structures on the technology’s redistribution layers instead of using conventional ball grid arrays for the transmission of the RF signal to/from the package. The interconnects interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic contacts with the waveguide. The interconnects achieve a measured insertion loss of 2.8 dB over a bandwidth of 33%. The adopted eWLB packaging technology is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This paper proposes cost-effective high-performance interconnects for THz integration, thus addressing one of the main challenges facing systems operating beyond 100 GHz.
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| 7. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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F-band Low-loss Tapered Slot Transition for Millimeter-wave System Packaging
- 2019
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In: 2019 49th European Microwave Conference, EuMC 2019. - 9782874870552 ; , s. 432-435
-
Conference paper (peer-reviewed)abstract
- This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized using a Linearly Tapered Slot (LTS) implemented in a commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. The LTS is mounted in the E-plane of a split-block waveguide module and fed through a microstrip line. The transition is experimentally verified using a back-to-back test structure and it exhibits an average insertion loss of 1.7 dB over the frequency range extending from 100 to 135 GHz. This work presents an on-chip packaging technique to realize the interface between MMICs and standard waveguides at millimeter-wave (mmW) frequencies and hence addressing one of the main integration challenging facing systems operating at that range.
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| 8. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
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Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver
- 2020
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In: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 10:3, s. 321-330
-
Journal article (peer-reviewed)abstract
- This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in a fully integrated receiver (Rx) module at the D -band (110–170 GHz). The solution consists of an MMIC-to-waveguide transition realized using an on-chip probe mounted in the E -plane of a split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from the waveguide to the probe. The transition's performance is experimentally verified using a back-to-back test chip, and measurement results show that the proposed packaging solution achieves a low insertion loss of only 0.7 dB and covers a very wide frequency range extending from 105 to 175 GHz. The proposed transition is also integrated with an in-phase/quadrature-phase (I/Q) Rx on the same chip. The Rx is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology and consists of a low-noise amplifier, an I/Q mixer, and a frequency tripler. Measurement results show that the Rx module achieves an average conversion gain of 23 dB across the frequency range of 110–145 GHz and has an average noise figure of 10.6 dB. The Rx MMIC has a dc power consumption of 440 mW and occupies an area of 1.6 × 1.6 mm 2 . This article addresses one of the main challenges in systems operating above 100 GHz and presents a fully integrated packaging solution that suits large integrated circuits and does not require any galvanic contacts nor impose any limitations on MMIC dimensions.
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| 9. |
- Hassona, Ahmed Adel, 1988, et al.
(author)
-
Silicon Taper Based D-Band Chip to Waveguide Interconnect for Millimeter-Wave Systems
- 2017
-
In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 27:12, s. 1092-1094
-
Journal article (peer-reviewed)abstract
- This letter presents a novel interconnect for coupling millimeter-wave (mmW) signals from integrated circuits to air-filled waveguides. The proposed solution is realized through a slot antenna implemented in embedded wafer level ball grid array (eWLB) process. The antenna radiates into a high-resistivity (HR) silicon taper perpendicular to its plane, which in turn radiates into an air-filled waveguide. The interconnect achieves a measured average insertion loss of 3.4 dB over the frequency range of 116-151 GHz. The proposed interconnect is generic and does not require any galvanic contacts. The utilized eWLB packaging process is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This letter proposes a straightforward cost-effective high-performance interconnect for mmW integration, and thus, addressing one of the main challenges facing systems operating beyond 100 GHz.
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| 10. |
- He, Zhongxia Simon, 1984, et al.
(author)
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A 90-140 GHz, High Power Frequency Source Packaged in a Self-aligned Waveguide Module
- 2018
-
In: Asia Pacific Microwave Conference-Proceedings. - 9784902339451 ; , s. 261-263
-
Conference paper (peer-reviewed)abstract
- This paper presents a solution for packaging monolithic microwave integrated circuit (MMIC) using commercially available liquid crystal polymer (LCP) substrate print circuit board. This package solution comprises of a novel self-aligned microstrip-to-waveguide transition design. For demonstration, an active frequency multiplier-by three MMIC at F-band (90-140 GHz) is packaged into a split-block waveguide module and tested. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The tripler module has measured output power of 10.6 dBm and a 3-dB output bandwidth of 36.3%, (90-130 GHz). Total power consumption is 156 mW at 2-dBm input power.
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