| 1. |
- Bao, M. Q., et al.
(författare)
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G-band Power Amplifiers in 130 nm InP Technology
- 2021
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Ingår i: EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. ; , s. 85-88
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Konferensbidrag (refereegranskat)abstract
- Two G-band three-stage power amplifiers (PA), a Darlington PA and a stacked PA, are designed and manufactured in 130 nm InP HBT Technology. The stacked PA shows a 70 GHz bandwidth of S21 (from 140 GHz to 210 GHz) with a peak S21 gain of 30 dB. It has a fractional bandwidth (FBW) of 40%. While the Darlington PA demonstrates a 90 GHz bandwidth of S21 (from 130 GHz to 220 GHz) with a peak S21 gain of 20 dB, the FBW of the Darlington PA is 51% which is highest among the G-band PAs. Furthermore, the Darlington PA has a saturated output power, Psat, of 9.6 dBm at 150 GHz, and a power added efficiency (PAE) of 14.7% with a 55 mW de power consumption. The stacked PA has a Psat of 13.4 dBm at 150 GHz, and a PAE of 17.3% with a 108 mW dc power consumption. To authors' knowledge, the stacked PA has the highest PAE among the D/G-band PAs published in the literature.
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| 2. |
- Beuerle, Bernhard, et al.
(författare)
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Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems
- 2023
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803
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Tidskriftsartikel (refereegranskat)abstract
- A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
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| 3. |
- Carpenter, Sona, 1983, et al.
(författare)
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A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology
- 2018
-
Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241
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Tidskriftsartikel (refereegranskat)abstract
- A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
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| 4. |
- Eriksson, Klas, 1983, et al.
(författare)
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Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
- 2014
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 4:1, s. 56-64
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Tidskriftsartikel (refereegranskat)abstract
- Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
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| 5. |
- Eriksson, Klas, 1983, et al.
(författare)
-
H-band MMIC amplifiers in 250 nm InP DHBT
- 2012
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Ingår i: 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, Warsaw, 21-23 May 2012. - 9781457714351 ; 2, s. 744-747
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Konferensbidrag (refereegranskat)abstract
- In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.
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| 6. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
- 2018
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 390-393
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Konferensbidrag (refereegranskat)abstract
- This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
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| 7. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
-
A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology
- 2017
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Ingår i: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512
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Konferensbidrag (refereegranskat)abstract
- This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
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| 8. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures
- 2021
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 31:1, s. 9-12
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to a quarter-wavelength cavity, which in turn couples to either a waveguide (WG) or another chip. The solution also uses a periodic electromagnetic bandgap (EBG) structure that controls the electromagnetic wave and prevents field leakage in undesired directions. The proposed solution is fabricated and demonstrated at the D-band (110-170 GHz), and the measurement results show that it achieves a minimum insertion loss of 0.8 and a 3-dB bandwidth extending from 124 to 161 GHz. The proposed approach does not require any galvanic contacts and can be used for packaging integrated circuits in WG modules as well as for chip-to-chip communication.
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| 9. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
-
D-band waveguide-to-microstrip transition implemented in eWLB packaging technology
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:4, s. 187-
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Tidskriftsartikel (refereegranskat)abstract
- This Letter presents a non-galvanic D-band (110-170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The interconnect consists of a patch-radiator-based waveguide transition implemented using one of the technology's redistribution layers. The patch radiates to a WR-6.5 standard waveguide perpendicular to its plane. An electromagnetic band-gap structure realised by metal patches is used to suppress undesired modes and improve the performance of the transition. The proposed solution is experimentally verified, and measurement results show that the transition exhibits an average insertion loss of 2 dB across the frequency range 122-146 GHz which, to the best of the authors' knowledge, is the lowest reported loss for a D-band packaging solution in eWLB technology and hence addresses one of the main integration challenges facing millimetre-wave systems.
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| 10. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
-
D-band Waveguide Transition Based on Linearly Tapered Slot Antenna
- 2017
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Ingår i: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac). - 9781538630556 ; , s. 64-67
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Konferensbidrag (refereegranskat)abstract
- In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110-170 GHz. The average return loss of the transition is -15 dB and the minimum is -9 dB. The structure occupies an area of 0.82x0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.
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