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Sökning: WFRF:(Virojanadara C.)

  • Resultat 1-4 av 4
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1.
  • Coletti, C., et al. (författare)
  • Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
  • 2007
  • Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 91:6, s. 061914-
  • Tidskriftsartikel (refereegranskat)abstract
    • Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.
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2.
  • Johansson, Leif I., et al. (författare)
  • Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission
  • 2014
  • Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 4:4157
  • Tidskriftsartikel (refereegranskat)abstract
    • Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with different azimuthal orientations and no rotational disorder within the grains was recently revealed for C-face graphene, but conventional ARPES still resolved only a single π-band. Here we report detailed nano-ARPES band mappings of individual graphene grains that unambiguously show that multilayer C-face graphene exhibits multiple π-bands. The band dispersions obtained close to the K-point moreover clearly indicate, when compared to theoretical band dispersion calculated in the framework of the density functional method, Bernal (AB) stacking within the grains. Thus, contrary to earlier claims, our findings imply a similar interaction between graphene layers on C-face and Si-face SiC.
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3.
  • Karlsson, P. G., et al. (författare)
  • Ultrathin ZrO2 films on Si-rich SiC(0001)-(3x3): Growth and thermal stability
  • 2007
  • Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 601:11, s. 2390-2400
  • Tidskriftsartikel (refereegranskat)abstract
    • The growth and thermal stability of ultrathin ZrO2 films on the Si-rich Si(0001)-(3 x 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 degrees C yields tetragonal ZrO2. An interface is formed between the ZrO2 film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O-2. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO2 and ZrO2 occurs, possibly under the formation of silicate. The alignment of the ZrO2 and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 degrees C does not lead to decomposition of the tetragonal ZrO2 (t-ZrO2) but changes are observed within the interface region. After annealing to 1000 degrees C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO2 remnants, metallic Zr silicide and Si aggregates. (c) 2007 Elsevier B.V. All rights reserved.
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4.
  • Virojanadara, Chariya, et al. (författare)
  • Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC(1-102): The (2x1) reconstruction
  • 2008
  • Ingår i: Surface Science. - : Elsevier. - 0039-6028 .- 1879-2758. ; 602:22, s. 3506-3509
  • Tidskriftsartikel (refereegranskat)abstract
    • The electronic and atomic structure of the 4H-SiC surface was investigated. Photoemission data indicate that the surface contains about 2 Si layers on top of the bulk layers. Scanning tunneling microscopy images show that these adlayers are terminated by an ordered array of adatom chains separated by the unit cell size. An electronic surface state located at a binding energy of 0.8 eV shows one-dimensional confinement with dispersion only along the chains. Based on the experimental observations, a tentative (2 × 1) surface model is derived with the surface terminated by alternating chains of Si adatoms and Si dimers in between.
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  • Resultat 1-4 av 4

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