| 1. |
- Wang, Chang, et al.
(författare)
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Molecular beam epitaxy growth of AlAs 1-x Bi x
- 2019
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 34:3
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Tidskriftsartikel (refereegranskat)abstract
- High quality AlAs 1-x Bi x layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 Å.
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| 2. |
- Chi, Chaodan, et al.
(författare)
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Si-based InGaAs photodetectors on heterogeneous integrated substrate
- 2021
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Ingår i: Science China: Physics, Mechanics and Astronomy. - : Springer Science and Business Media LLC. - 1674-7348 .- 1869-1927. ; 64:6
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W−1. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
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| 3. |
- Zhao, Shuyan, et al.
(författare)
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Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
- 2020
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Ingår i: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 29:7
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Tidskriftsartikel (refereegranskat)abstract
- Strain and stress were simulated using finite element method (FEM) for three III-V-on-Insulator (III-VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
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| 4. |
- Chi, Chaodan, et al.
(författare)
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Molecular beam epitaxy growth of GaSb1-xBix without rotation
- 2019
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X. ; 168
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Tidskriftsartikel (refereegranskat)abstract
- GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets.
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| 5. |
- Jiao, Zhejing, et al.
(författare)
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InAs triangular quantum wells grown on InP/SiO 2 /Si heterogeneous substrate for mid-infrared emission
- 2021
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001. ; 136
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Tidskriftsartikel (refereegranskat)abstract
- The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range.
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| 6. |
- Jin, Tingting, et al.
(författare)
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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
- 2022
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Ingår i: Science China Information Sciences. - : Springer Science and Business Media LLC. - 1869-1919 .- 1674-733X. ; 65:8
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Tidskriftsartikel (refereegranskat)abstract
- Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
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| 7. |
- Lin, Jiajie, et al.
(författare)
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Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
- 2020
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 8:5
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Tidskriftsartikel (refereegranskat)abstract
- Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP-Si bonding are similar to those in Si-Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs' spacing, and moreover, the relationship between bubble formation and the LOT's structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
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| 8. |
- Wang, Shu Min, 1963, et al.
(författare)
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Dilute bismide and nitride alloys for mid-IR optoelectronic devices
- 2019
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Ingår i: Mid-infrared Optoelectronics: Materials, Devices, and Applications. ; , s. 457-492
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Dilute bismide and nitride provide flexible bandgap and strain engineering, owing to their unique physical properties, and are attractive for mid-IR (2-12 µm) optoelectronic device applications. In this chapter, we review progresses of theoretical simulations, epitaxial growth, material characterizations, and devices of dilute bismides including GaSbBi, AlSbBi, InAsBi, InAsSbBi, InGaAsBi, and InSbBi, as well as dilute nitrides including InNAs, GaNSb, InNSb, GaInNAs, and InNAsSb. The overview mainly focuses on growth optimization, optical characterizations, and theoretical calculations ending with outlook remarks about advantages and main challenges of both exotic materials.
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| 9. |
- Yue, L., et al.
(författare)
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Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
- 2018
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Ingår i: Optical Materials Express. - 2159-3930. ; 8:4, s. 893-900
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Tidskriftsartikel (refereegranskat)abstract
- GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.
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| 10. |
- Zhang, Xiaolei, et al.
(författare)
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Growth and properties of AlSbBi thin films by molecular beam epitaxy
- 2019
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Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388. ; 801, s. 239-242
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Tidskriftsartikel (refereegranskat)abstract
- AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy for the first time. The effect of growth temperature, Sb flux and Bi flux on Bi incorporation are systematically studied. The incorporation of small size Al atoms is proven to be beneficial to improve the stability of AlSbBi with no change of Bi content in the growth temperature range of 360–420 °C. The AlBi lattice constant is determined to be about 6.37 Å by the combination of Rutherford backscattering spectroscopy and high resolution X-ray diffraction. The new AlBi vibration modes located at 286 cm−1 and 295 cm−1 are observed and attributed to AlBi TO and LO mode, respectively, in agreement with theoretical simulations.
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