| 1. |
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| 2. |
- Wang, J., et al.
(författare)
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Sub-μm2 power splitters by using silicon hybrid plasmonic waveguides
- 2011
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 19:2, s. 838-847
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Tidskriftsartikel (refereegranskat)abstract
- Nano-scale power splitters based on Si hybrid plasmonic waveguides are designed by utilizing the multimode interference (MMI) effect as well as Y-branch structure. A three-dimensional finite-difference time-domain method is used for simulating the light propagation and optimizing the structural parameters. The designed 1×2 50:50 MMI power splitter has a nano-scale size of only 650 nm×530 nm. The designed Y-branch power splitter is also very small, i.e., about 900 nm×600 nm. The fabrication tolerance is also analyzed and it is shown that the tolerance of the waveguide width is much larger than±50 nm. The power splitter has a very broad band of over 500 nm. In order to achieve a variable power splitting ratio, a 2×2 two-mode interference coupler and an asymmetric Y-branch are used and the corresponding power splitting ratio can be tuned in the range of 97.1%:2.9%-1.7%:98.3% and 84%:16%-16%:84%, respectively. Finally a 1×4 power splitter with a device footprint of 1.9 μm×2.6 μm is also presented using cascaded Y-branches.
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| 3. |
- Jaskorzynska, Bozena, et al.
(författare)
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Dielectric and Plasmon Slot Waveguides for Photonic Integration
- 2009
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Ingår i: ICTON 2009: 11th International Conference on Transparent Optical Networks. - NEW YORK : IEEE. ; , s. 653-656
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Konferensbidrag (refereegranskat)abstract
- Slot waveguides formed either in high-index dielectrics or in metals attract great interest because they provide sub-wavelength confinement in the slot region. While this feature is very attractive for devices relying on stimulated emission or nonlinear effects, it does not necessarily improve the integration density. The spacing between dielectric slot waveguides is still limited by diffraction. Although for metal (plasmon) waveguides the total field can be shrunk far beyond the diffraction limit, the associated increase in propagation loss will set practical limits on both the minimum waveguide width and edge-to-edge separation. Here we compare the packing densities for 3D slot waveguides in silicon and plasmon waveguides in gold with a silicon slot. As a reference we also consider silicon photonic wire. We calculate center-to-center waveguide separations (pitch) versus cross-talk level. We show that at ca 24 dB/mu m cross-talk and requiring the attenuation length of at least 5 mu m, plasmon slot waveguides can be packed ca 3.5 times denser than silicon slot waveguides, and ca 2.5 times denser than photonic wires. We also show examples of the fabricated devices.
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| 4. |
- Junesand, Carl, et al.
(författare)
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Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Verlag (Germany) / Institute of Electrical and Electronics Engineers (IEEE). - 0361-5235 .- 1543-186X. ; 41:9, s. 2345-2349
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Tidskriftsartikel (refereegranskat)abstract
- Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.
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| 5. |
- Junesand, Carl, et al.
(författare)
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InP overgrowth on SiO2 for active photonic devices on silicon
- 2010
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE - International Society for Optical Engineering.
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Konferensbidrag (refereegranskat)abstract
- ntegrationof III-V materials on silicon wafer for active photonic deviceshave previously been achieved by growing thick III-V layers ontop of silicon or by bonding the III-V stack layersonto a silicon wafer. Another way is the epitaxial lateralovergrowth (ELOG) of a thin III-V material from a seedlayer directly on the silicon wafer, which can be usedas a platform for the growth of active devices. Asa prestudy, we have investigated lateral overgrowth of InP byHydride Vapor Phase Epitaxy (HVPE) over SiO2 masks of differentthickness on InP substrates from openings in the mask. Openingswhich varied in direction, width and separation were made withE-beam lithography allowing a good dimension control even for nano-sizedopenings (down to 100 nm wide). This mimics overgrowth ofInP on top of SiO2/Si waveguides. By optimizing the growthconditions in terms of growth temperature and partial pressure ofthe source gases with respect to the opening direction, separationand width, we show that a thin (~200 nm) layerof InP with good morphology and crystalline quality can begrown laterally on top of SiO2. Due to the thingrown InP layer, amplification structures on top of it canbe well integrated with the underlying silicon waveguides. The proposedELOG technology provides a promising integration platform for hybrid InP/siliconactive devices.
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| 6. |
- Junesand, Carl, 1981-, et al.
(författare)
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Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics
- 2011
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Ingår i: Conference Proceedings. - : VDE VERLAG GMBH. - 9783800733569 - 9781457717536 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- The effect of chemical mechanical polishing (CMP) on epitaxial lateral overgrowth (ELOG) of InP is investigated. To this end, silicon wafers with a seed layer of InP has been treated in two ways; by depositing SiO2 mask and polishing it prior to performing ELOG, and by growing additional InP directly on the InP/Si wafer and then polishing the InP layer prior to depositing and patterning SiO2 followed by subsequent ELOG. For InP seed, a two step process with Chemlox™ slurry and sodium hypochlorite mixed with citric acid-based slurry has been used whereas for SiO2 surface polishing, only one slurry was employed. Analysis of the ELOG layers has been carried out with atomic force microscope (AFM) and panchromatic cathodoluminescence (PC-CL) in-situ a scanning electron microscope (SEM). The results show that polishing the InP/Si layer has not only a beneficial effect on surface morphology of the ELOG layer but also on reduction of its defect density as a consequence of improved conditions for near-ideal coalescence.
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| 7. |
- Junesand, Carl, et al.
(författare)
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Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth
- 2013
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Ingår i: Optical Materials Express. - : Optical Society of America. - 2159-3930. ; 3:11, s. 1960-1973
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Tidskriftsartikel (refereegranskat)abstract
- InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELOG from single openings. Furthermore, stacking faults (SFs) observed in ELOG layers grown from both opening types originate not from coalescence, but possibly from formation during early stages of ELOG or simply propagate from the seed layer through the mask openings. A model describing their propagation is devised and applied to the existent conditions, showing that SFs can effectively be filtered under certain conditions. ELOG layers grown from identical patterns on InP substrate contained no defects, indicating that the defect-forming mechanism is in any case not inherent to ELOG itself.
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| 8. |
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| 9. |
- Kataria, Himanshu, et al.
(författare)
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Towards a monolithically integrated III-V laser on silicon : Optimization of multi-quantum well growth of InP on Si
- 2013
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 28:9, s. 094008-
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Tidskriftsartikel (refereegranskat)abstract
- High-quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved. Indium phosphide layer on silicon, the pre-requisite for the growth of quantum wells is achieved via nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed indium phosphide layer on silicon. This technique makes use of epitaxial lateral overgrowth (ELOG) from closely spaced (1 m) e-beam lithography-patterned nano-sized openings (∼300 nm) by low-pressure hydride vapor phase epitaxy. A silicon dioxide mask with carefully designed opening patterns and thickness with respect to the opening width is used to block the defects propagating from the indium phosphide seed layer by the so-called necking effect. Growth conditions are optimized to obtain smooth surface morphology even after coalescence of laterally grown indium phosphide from adjacent openings. Surface morphology and optical properties of the NELOG indium phosphide layer are studied using atomic force microscopy, cathodoluminescence and room temperature -photoluminescence (-PL) measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on the NELOG indium phosphide is conducted. The mask patterns to avoid loading effect that can cause excessive well/barrier thickness and composition change with respect to the targeted values is optimized. Cross-sectional transmission electron microscope studies show that the coalesced NELOG InP on Si is defect-free. PL measurement results indicate the good material quality of the grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer. PL spectra reveal the existence of resonant modes arising out of these MD cavities. A mode solver using finite difference method indicates the pertinent steps that should be adopted to realize lasing.
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| 10. |
- Lou, Fei, et al.
(författare)
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Experimental demonstration of ultra-compact directional couplers based on silicon hybrid plasmonic waveguides
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:24, s. 241105-
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Tidskriftsartikel (refereegranskat)abstract
- Hybrid plasmonic waveguides and directional couplers have been experimentally demonstrated. Using a direct measurement method, the propagation loss of a 170 nm wide waveguide is measured to be 0.08 dB/mu m at 1550 nm when the thickness of low-index region is 56 nm. Ultra-compact directional couplers based on such hybrid plasmonic waveguides are demonstrated with gaps of 140 nm, 185 nm, 235 nm, and 290 nm. The corresponding coupling lengths measured are 1.55 mu m, 2.2 mu m, 3.2 mu m, and 4.8 mu m, respectively, which are in very good agreement with the simulations. These ultra-compact devices can be potentially used in future ultra-dense photonic integrated circuits.
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