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- Dumitrescu, Mihail, et al.
(författare)
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10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
- 2009
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Ingår i: 2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009. - Washington, D.C. : OSA. - 9781557528650
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Konferensbidrag (refereegranskat)abstract
- Dilute-nitride lasers with record performances have been used to build uncooled transceivers and failure free 10 Gb/s optical transmission was achieved over 815 m of multimode Corning InfiniCor fiber under the LRM standard.
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- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:7, s. 1195-7
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we investigate the changes in the surface morphology and emission wavelength of InAs quantum dots (QDs) during initial GaAs encapsulation by atomic force microscopy and photoluminescence. The density (2.9×1010 cm-2) and height (7.9±0.4 nm) of the uncapped QDs decrease and saturate at 0.6×1010 cm-2 and 4 nm, respectively, after the deposition of 4 monolayers (MLs) of GaAs. A model for the evolution of surface morphology is proposed. Photoluminescence spectra of the surface dots show a wavelength shift from 1.58 to 1.22 ?m when the GaAs capping layer thickness increases from 0 to 8 MLs.
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- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 251:1-4, s. 145-9
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Tidskriftsartikel (refereegranskat)abstract
- Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
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- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
- 2002
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Ingår i: International Conference on Molecular Beam Epitaxy, 2002. ; , s. 285-6
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Konferensbidrag (refereegranskat)abstract
- Self-organised InAs quantum dots (QDs) are used as optical gain material in long wavelength lasers on GaAs. The measured QD height and density are often used as figures of merits, and great efforts have been made to maximise these two parameters to extend the wavelength coverage. In this work, we investigate the influence of initial GaAs and AlAs cap layers on the structural properties of InAs QDs. The study clearly shows that capping of InAs QDs causes a strong modification of not only the QD shape and height but also the QD density
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- Fu, Ying, et al.
(författare)
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Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:7
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Tidskriftsartikel (refereegranskat)abstract
- The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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