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Sökning: WFRF:(Wellmann J) > Kungliga Tekniska Högskolan

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1.
  • Sun, Jianwu, et al. (författare)
  • Solar driven energy conversion applications based on 3C-SiC
  • 2016
  • Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 1028-1031
  • Konferensbidrag (refereegranskat)abstract
    • There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate for an intermediate band photovoltaic material, and (ii) 3C-SiC as a photoelectrode for solar-driven water splitting. Absorption spectrum of boron doped 3C-SiC shows a deep energy level at ~0.7 eV above the valence band edge. This indicates that boron doped 3C-SiC may be a good candidate as an intermediate band photovoltaic material, and that bulk like 3C-SiC can have sufficient quality to be a promising electrode for photoelectrochemical water splitting.
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2.
  • Syväjärvi, Mikael, et al. (författare)
  • Fluorescent SiC as a new material for white LEDs
  • 2012
  • Ingår i: Physica scripta. T. - 0281-1847 .- 0031-8949 .- 1402-4896. ; T148, s. 014002-
  • Tidskriftsartikel (refereegranskat)abstract
    • Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
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