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Sökning: WFRF:(Wellmann J) > Konferensbidrag

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1.
  • Sun, Jianwu, et al. (författare)
  • Solar driven energy conversion applications based on 3C-SiC
  • 2016
  • Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 1028-1031
  • Konferensbidrag (refereegranskat)abstract
    • There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate for an intermediate band photovoltaic material, and (ii) 3C-SiC as a photoelectrode for solar-driven water splitting. Absorption spectrum of boron doped 3C-SiC shows a deep energy level at ~0.7 eV above the valence band edge. This indicates that boron doped 3C-SiC may be a good candidate as an intermediate band photovoltaic material, and that bulk like 3C-SiC can have sufficient quality to be a promising electrode for photoelectrochemical water splitting.
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2.
  • Hens, Philip, et al. (författare)
  • Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  • 2012
  • Ingår i: Materials Science Forum Vols 717 - 720. - : Trans Tech Publications Inc.. ; , s. 177-180
  • Konferensbidrag (refereegranskat)abstract
    • In this work a new approach for the production of freestanding cubic silicon carbide (3C-SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C-SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).
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