| 1. |
- Xu, K., et al.
(författare)
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Graphene GaN-Based Schottky Ultraviolet Detectors
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 62:9, s. 2802-2808
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Tidskriftsartikel (refereegranskat)abstract
- Graphene GaN-based Schottky ultraviolet detectors are fabricated. The monolayer graphene is grown by chemical vapor deposition. The graphene is much more transparent than metals, as confirmed by the fact that our devices retain their high responsivity up to 360-nm wavelength (corresponding to the band edge absorption of GaN). Importantly, by virtue of the tunable work function of graphene, the graphene GaN Schottky barrier height can be greatly enlarged. The built-in field is enhanced, and the detector performance is improved. The current ratio with and without luminescence is up to 1.6 x 10(4). The characteristic time constants of the devices are in the order of a few milliseconds. The device open-circuit voltage and short-circuit current are also increased. At last, special type Schottky devices consisting of GaN nanorods or surface-etched GaN are prepared for complementary study. It is found although the dry etching induced surface defects lead to an increase in the dark current, and these carrier traps also greatly contribute to the photoconductivity under luminescence, resulting in extraordinarily large responsivity (up to 360 A/W at -6 V).
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| 2. |
- Sun, Jie, 1977, et al.
(författare)
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Electrochemical Bubbling Transfer of Graphene Using a Polymer Support with Encapsulated Air Gap as Permeation Stopping Layer
- 2016
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Ingår i: Journal of Nanomaterials. - : Hindawi Limited. - 1687-4129 .- 1687-4110. ; 2016
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Tidskriftsartikel (refereegranskat)abstract
- Electrochemical bubbling transfer of graphene is a technique with high industrial potential due to its scalability, time- and cost-effectiveness, and ecofriendliness. However, the graphene is often damaged due to the turbulence and the trapped bubbles formed by the direct H2O and H+ permeation through the supporting polymer. We invent a graphene mechanical support of polyethylene terephthalate foil/plastic frame/poly(methyl methacrylate) sandwich, with an encapsulated air gap as the permeation stopping layer. The graphene damage is drastically reduced, as confirmed by the morphology and structural and electrical characterization, ultimately improving the controllability/reproducibility of the bubbling transfer of graphene and other two-dimensional materials.
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| 3. |
- Bao, Chunxiong, et al.
(författare)
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High Performance and Stable All-Inorganic Metal Halide Perovskite-Based Photodetectors for Optical Communication Applications
- 2018
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Ingår i: Advanced Materials. - : WILEY-V C H VERLAG GMBH. - 0935-9648 .- 1521-4095. ; 30:38
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Tidskriftsartikel (refereegranskat)abstract
- Photodetectors are critical parts of an optical communication system for achieving efficient photoelectronic conversion of signals, and the response speed directly determines the bandwidth of the whole system. Metal halide perovskites, an emerging class of low-cost solution-processed semiconductors, exhibiting strong optical absorption, low trap states, and high carrier mobility, are widely investigated in photodetection applications. Herein, through optimizing the device engineering and film quality, high-performance photodetectors based on all-inorganic cesium lead halide perovskite (CsPbIxBr3-x), which simultaneously possess high sensitivity and fast response, are demonstrated. The optimized devices processed from CsPbIBr2 perovskite show a practically measured detectable limit of about 21.5 pW cm(-2) and a fast response time of 20 ns, which are both among the highest reported device performance of perovskite-based photodetectors. Moreover, the photodetectors exhibit outstanding long-term environmental stability, with negligible degradation of the photoresponse property after 2000 h under ambient conditions. In addition, the resulting perovskite photodetector is successfully integrated into an optical communication system and its applications as an optical signal receiver on transmitting text and audio signals is demonstrated. The results suggest that all-inorganic metal halide perovskite-based photodetectors have great application potential for optical communication.
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| 4. |
- Pecunia, Vincenzo, et al.
(författare)
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Roadmap on energy harvesting materials
- 2023
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Ingår i: Journal of Physics. - : IOP Publishing. - 2515-7639. ; 6:4
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Tidskriftsartikel (refereegranskat)abstract
- Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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| 5. |
- Zhang, Keliang, et al.
(författare)
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Rational design and kinetics study of flexible sodium-ion full batteries based on binder-free composite film electrodes
- 2019
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488 .- 2050-7496. ; 7:16, s. 9890-9902
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Tidskriftsartikel (refereegranskat)abstract
- A high-performance flexible sodium-ion full battery (FSIFB) is developed by using binder-free composite film (BFCF) electrodes without using conductive carbon and current collectors. Hard carbon fibers decorated with different electrochemical active materials are used as the supporting framework and 3D conductive network of FSIFBs for the first time. Different pre-sodiated anodes and the electrolyte additives are designed for well-matched FSIFBs. Using a porous Na3V2(PO4)(3) coated hard carbon fiber film with a mass loading of 2.34 mg cm(-2) as the cathode and a pre-sodiated graphene/SiC/hard carbon fiber film with a mass loading of 1.50 mg cm(-2) as the anode, an optimized FSIFB is designed. It delivers high output voltage (3.34 V), high energy density (234.1 W h kg(-1) at a high-current rate of 0.5 A g(-1)), ultralong cyclability (over 2905 cycles at 0.5 A g(-1) and 1000 cycles at 5 A g(-1)), and high coulombic efficiency (approaching 100%), which surpasses those of all FSIFBs reported so far. Furthermore, this FSIFB still maintains good electrochemical attributes even at serious bending states in water. The models of the solid electrolyte interphase behavior on the surface of electrodes in the FSIFB are studied by using EIS, and a reaction mechanism and an equivalent electrical circuit are proposed. We also provide the videos of the preparation process for a pouch-type FSIFB to demonstrate its simple operability and potential applications.
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| 6. |
- Yuan, Ying Kuo, et al.
(författare)
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Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode
- 2021
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Ingår i: Wuli Xuebao/Acta Physica Sinica. - : Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences. - 1000-3290. ; 70:19
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Tidskriftsartikel (refereegranskat)abstract
- In the information display field, micro-light-emitting diodes (micro-LEDs) possess high potentials and they are expected to lead the direction of developing the next-generation new display technologies. Their display performances are superior to those produced by the currently prevailing liquid crystal and organic light-emitting diode based technologies. However, the micro-LED pixels and their driving circuits are often fabricated on different wafers, which implies that the so-called mass transfer seems to be inevitable, thus facing an obvious bottleneck. In this paper, the emerging graphene field effect transistors are used as the driving elements and integrated onto the GaN micro-LEDs, which is because the pixels and drivers are prepared directly on the same wafer, the technical problem of mass transfer is fundamentally bypassed. Furthermore, in traditional lithographic process, the ultraviolet photoresist directly contacts the graphene, which introduces severe carrier doping, thereby leading to deteriorated graphene transistor properties. This, not surprisingly, further translates into lower performances of the integrated devices. In the present work, proposed is a technique in which the polymethyl methacrylate (PMMA) thin films act as both the protection layers and the interlayers when optimizing the graphene field effect transistor processing. The PMMA layers are sandwiched between the graphene and the ultraviolet photoresist, which is a brand new device fabrication process. First, the new process is tested in discrete graphene field effect transistors. Compared with those devices that are processed without the PMMA protection thin films, the graphene devices fabricated with the new technology typically show their Dirac point at a gate voltage (Vg) deviation from Vg = 0, that is, 22 V lower than their counterparts. In addition, an increase in the carrier mobility of 32% is also observed. Finally, after applying the newly developed fabrication process to the pixel-and-driver integrated devices, it is found that their performances are improved significantly. With this new technique, the ultraviolet photoresist no longer directly contacts the sensitive graphene channel because of the PMMA protection. The doping effect and the performance dropping are dramatically reduced. The technique is facile and cheap, and it is also applicable to two-dimensional materials besides graphene, such as MoS2 and h-BN. It is hoped that it is of some value for device engineers working in this field.
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| 7. |
- Dong, Y. B., et al.
(författare)
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The growth of graphene on Ni–Cu alloy thin films at a low temperature and its carbon diffusion mechanism
- 2019
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Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 9:11
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Tidskriftsartikel (refereegranskat)abstract
- Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni–Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni–Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni–Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2 /Si substrate at a low temperature (~600◦ C).
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| 8. |
- Li, Kai, et al.
(författare)
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Metal thermopile infrared detector with vertical graphene
- 2023
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Ingår i: Wuli Xuebao/Acta Physica Sinica. - : Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences. - 1000-3290. ; 72:3
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Tidskriftsartikel (refereegranskat)abstract
- Thermopile infrared detector is a kind of detector device mainly composed of thermocouple as the basic unit. Because of its simple principle, no need of cooling equipment, and other advantages, it has been widely used in various fields of production and life. However, the absorption rates of the materials in conventional thermopile devices are poor, and the majority of them are incompatible with microfabrication methods. In this work, a metal thermopile infrared detector with vertical graphene (VG) is designed and fabricated. The VG is grown via plasma enhanced chemical vapor deposition, and retained at the device’s thermal ends to provide the thermopile IR detector’s wideband and high response characteristics. The detector achieves a room temperature responsivity reaching a value as high as 1.53 V/W at 792 nm, which can increase the response results about 28 times and reduce the response time to 0.8 ms compared with the thermopile detector without VG. After systematically measuring the response results, it is finally found that there are three main mechanisms responsible for the response on the composite device. The first one is the response generated by the metal thermopile itself alone. The second one is the response increased eventually by the contribution of VG covered at the metal thermal junction that expands the temperature difference. The last one is the response generated by the temperature gradient existing inside the VG on the surface of the device after the absorption of heat. The portion of each partial response mechanism in the total response is also analyzed, providing a new reference direction for analyzing the response generation mechanism of thermopile detectors with other absorbing materials. The process is compatible with the microfabrication, while the device performance is enhanced and suitable for mass production. Furthermore, by utilizing the surface plasmon resonance to combine VG with metal nanoparticles, the material’ s light absorption is found to be enhanced significantly under the same conditions, and the resulting thermal voltage can be increased to 6 times. The results indicate that VG promises to possess practical applications, in many fields such as photoelectric sensing and power production devices. This technology provides a new method to manufacture high-performance thermopile infrared detectors and other sensor devices.
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| 9. |
- Xu, Kun, et al.
(författare)
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Special Issue on ACP/IPOC 2020
- 2023
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 33:18, s. 977-977
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We are pleased to provide readers with the newest and important technologies presented in Asia Communications and Photonics Conference (ACP) and International Conference on Information Photonics and Optical Communications (IPOC) 2020 (ACP/IPOC 2020), through this Special Issue published by the IEEE Photonics Technology Letters (PTL) journal. Technologies of photonics and optical communications (POCs) have developed rapidly in the last decades and have evolved to become a key-enabling component for the applications of high-speed telecommunications, advanced microwave signal generation and processing, astronomy observations, and even for quantum information processing and computing. The field of POC continues attracting a great deal of attention and keeps progressing in several important directions. Based on the nowadays matured exploration methods, current research is mainly directed towards implementations in integrated formats, such as high-speed optical transmission, big-capacity optical switching, automated optical-network/system evolution, and so on. In addition, intensive research is being conducted toward the utilization of POC across the abovementioned practical application areas and others.
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| 10. |
- Zhang, H., et al.
(författare)
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Ageing hardening and corrosion resistance of Fe 60 Cr 18 Cu 3 (MnCoNiMoAlTi) 19 medium-entropy alloy
- 2023
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Ingår i: Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals. - 1004-0609. ; 33:8, s. 2622-2634
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Tidskriftsartikel (refereegranskat)abstract
- Fe60Cr18Cu3(CoMnMoNiAlTi)19 medium-entropy stainless alloy (MEA) was prepared by vacuum arc furnace melting. The ageing hardening mechanism and corrosion resistance of alloy were studied. The results show that the MEA has simple BCC solid solution phase after solidification, due to the influence of medium-entropy effect. HRTEM results show that the high level of lattice distortion in the supersaturated BCC solid solution matrix leads to a high amount of nanometer-sized ordered B2 coherent precipitates after ageing treatment, and the maximum hardness of MESS after ageing reaches 621HV0.5. The resistance to corrosion in hot sulfuric acid and to pitting in the NaCl solution are both greatly improved compared with the conventional 17-4PH steel, as evidenced by more stable anodic passivation zone and significantly reduced corrosion dissolution rate in the MEA. XPS analyses results show that the multi-component passive film, which composes of high contents of anti-corrosion elements including Crhy3 +, Crox3 +, Cu+ox, Ti4ox+, Al3ox+ and Mo6ox+, is the main reason for the excellent pitting resistance and the reduced growth of pitting pit in the NaCl solution.
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