| 1. |
- Guo, W., et al.
(författare)
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Rapid chemical vapor deposition of graphene on liquid copper
- 2016
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Ingår i: Synthetic Metals. - : Elsevier BV. - 0379-6779. ; 216, s. 93-97
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Tidskriftsartikel (refereegranskat)abstract
- Molten copper is used to catalyze the graphene synthesis by chemical vapor deposition. The Cu has no grains above melting temperature, which is favorable for graphene growth. Using a vertical cold wall system, the deposition rate is drastically increased as compared with common hot-wall tube furnaces, pushing the method one step forward towards applications. A molybdenum-graphite Joule heater is used to avoid mechanical deformation of the carrier foil for the catalyst to ease the subsequent processes. The rapid deposition makes it possible to observe graphene growth on liquid Cu even at low pressure, where severe Cu evaporation simultaneously occurs.
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| 2. |
- Sun, Jie, 1977, et al.
(författare)
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Electrochemical Bubbling Transfer of Graphene Using a Polymer Support with Encapsulated Air Gap as Permeation Stopping Layer
- 2016
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Ingår i: Journal of Nanomaterials. - : Hindawi Limited. - 1687-4129 .- 1687-4110. ; 2016
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Tidskriftsartikel (refereegranskat)abstract
- Electrochemical bubbling transfer of graphene is a technique with high industrial potential due to its scalability, time- and cost-effectiveness, and ecofriendliness. However, the graphene is often damaged due to the turbulence and the trapped bubbles formed by the direct H2O and H+ permeation through the supporting polymer. We invent a graphene mechanical support of polyethylene terephthalate foil/plastic frame/poly(methyl methacrylate) sandwich, with an encapsulated air gap as the permeation stopping layer. The graphene damage is drastically reduced, as confirmed by the morphology and structural and electrical characterization, ultimately improving the controllability/reproducibility of the bubbling transfer of graphene and other two-dimensional materials.
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| 3. |
- Xu, K., et al.
(författare)
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GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:22, s. 5-
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Tidskriftsartikel (refereegranskat)abstract
- Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.
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| 4. |
- Xu, K., et al.
(författare)
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Graphene GaN-Based Schottky Ultraviolet Detectors
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 62:9, s. 2802-2808
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Tidskriftsartikel (refereegranskat)abstract
- Graphene GaN-based Schottky ultraviolet detectors are fabricated. The monolayer graphene is grown by chemical vapor deposition. The graphene is much more transparent than metals, as confirmed by the fact that our devices retain their high responsivity up to 360-nm wavelength (corresponding to the band edge absorption of GaN). Importantly, by virtue of the tunable work function of graphene, the graphene GaN Schottky barrier height can be greatly enlarged. The built-in field is enhanced, and the detector performance is improved. The current ratio with and without luminescence is up to 1.6 x 10(4). The characteristic time constants of the devices are in the order of a few milliseconds. The device open-circuit voltage and short-circuit current are also increased. At last, special type Schottky devices consisting of GaN nanorods or surface-etched GaN are prepared for complementary study. It is found although the dry etching induced surface defects lead to an increase in the dark current, and these carrier traps also greatly contribute to the photoconductivity under luminescence, resulting in extraordinarily large responsivity (up to 360 A/W at -6 V).
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| 5. |
- Xu, K., et al.
(författare)
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Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:16
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Tidskriftsartikel (refereegranskat)abstract
- By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system. Despite being highly polycrystalline, it is as conductive and transparent as standard graphene and can be used in light emitting diodes as transparent electrodes. 7-10 nm indium tin oxide (ITO) contact layer is inserted between the graphene and p-GaN to enhance hole injection. Devices with forward voltage and transparency comparable to those using traditional 240 nm ITO are achieved with better ultraviolet performances, hinting the promising future for application-oriented graphene by rapid CVD.
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| 6. |
- Xu, K., et al.
(författare)
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ZnO nanorods/graphene/Ni/Au hybrid structures as transparent conductive layer in GaN LED for low work voltage and high light extraction
- 2016
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 126, s. 5-9
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, by virtue of one-dimensional ZnO nanorods and two-dimensional graphene film hybrid structures, both the enhanced current spreading and enhanced light extraction were realized at the same time. A 1 nm/1 nm Ni/Au layer was used as an interlayer between graphene and pGaN to form ohmic contact, which makes the device have a good forward conduction properties. Through the comparison of the two groups of making ZnO nanorods or not, it was found that the 30% light extraction efficiency of the device was improved by using the ZnO nanorods. By analysis key parameters of two groups such as the turn-on voltage, work voltage and reverse leakage current, it was proved that the method for preparing surface nano structure by hydrothermal method self-organization growth ZnO nanorods applied in GaN LEDs has no influence to device's electrical properties. The hybrid structure application in GaN LED, make an achievement of a good ohmic contact, no use of ITO and enhancement of light extraction at the same time, meanwhile it does not change the device structure, introduce additional process, worsen the electrical properties.
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| 7. |
- Dong, Y. B., et al.
(författare)
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High Light Extraction Efficiency AlGaInP LEDs With Proton Implanted Current Blocking Layer
- 2016
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 37:10, s. 1303-1306
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Tidskriftsartikel (refereegranskat)abstract
- Improving light extraction efficiency is the key issue for light-emitting diodes (LEDs). Nowadays, a vertical structure design dominates LEDs. However, the light from the active region just below the p-electrode is severely blocked by the metal contact. In this letter, we use proton implantation with a depth all the way to the active region to turn the part beneath the p-pad insulating, which constitutes the most-effective-ever current blocking method. Earlier particle implantation studies never reached the device active region. Our experimental results show that the H+-implanted LEDs improve the light output power by 75% compared with non-implanted counterparts and the light intensity increases by 64.48%. By virtue of indium tin oxide current spreading film, the increase in working voltage is negligible. Analyzing the reverse leakage current, the side effect associated with the implantation is limited to an acceptable range. Numerical simulation is performed to support the experiment. Our results represent a new and simple method for solving the light blocking problem in vertical LEDs, without introducing the seemingly existing severe implantation damage to the device structure.
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| 8. |
- Dong, Y. B., et al.
(författare)
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The growth of graphene on Ni–Cu alloy thin films at a low temperature and its carbon diffusion mechanism
- 2019
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Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 9:11
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Tidskriftsartikel (refereegranskat)abstract
- Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni–Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni–Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni–Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2 /Si substrate at a low temperature (~600◦ C).
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| 9. |
- Dong, Y. B., et al.
(författare)
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Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO 2 toward all-carbon electronics
- 2018
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 6:2
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Tidskriftsartikel (refereegranskat)abstract
- A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
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| 10. |
- Dong, Yibo, et al.
(författare)
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In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application
- 2020
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:1, s. 238-246
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Tidskriftsartikel (refereegranskat)abstract
- A technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 degrees C. The graphene growth is catalyzed by a Ni-Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free, and almost wrinkle-free, with a high repeatability and rapid growth. The etching method of the metal sacrificial layer is the core of this technique, and the mechanism is analyzed. Graphene has been found to play an important role in accelerating etching speeds. The Ni-Cu alloy exhibits a high catalytic activity, and thus, high-quality graphene can be obtained at a lower temperature. Moreover, the Ni-Cu layer accommodates a limited amount of carbon atoms, which ensures a high monolayer ratio of the graphene. The carbon solid solubility of the alloy is calculated theoretically and used to explain the experimental findings. The method is compatible with the current semiconductor process and is conducive to the industrialization of graphene devices.
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