| 1. |
- Meng, Fantao, et al.
(författare)
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Nonlinear electrical properties of Si three-terminal junction devices
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:24
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]
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| 2. |
- Sun, Jie, et al.
(författare)
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A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 29:6, s. 540-542
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.
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| 3. |
- Sun, Jie, et al.
(författare)
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A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951. ; 92:1
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Tidskriftsartikel (refereegranskat)abstract
- An integrated nanoelectronic circuit is fabricated from a high-mobility In0.75Ga0.25As/InP heterostructure. The manufactured device comprises two double in-plane gate transistors with a current channel of 1.1 mu m in length and 100 nm in width. The two transistors are coupled to each other in a configuration that the source of one transistor is directly connected with one in-plane gate of the other transistor. Electrical measurements reveal that this device functions as an SR (set-reset) latch (a sequential logic device) with a gain of similar to 4 in the logic swing at room temperature. The demonstrated device provides a simple circuit design for SR latches.
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| 4. |
- Sun, Jie, et al.
(författare)
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Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:19
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Tidskriftsartikel (refereegranskat)abstract
- Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.
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| 5. |
- Sun, Jie, 1977, et al.
(författare)
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Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high- κ dielectric
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:16
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Tidskriftsartikel (refereegranskat)abstract
- A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible.
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| 6. |
- Sun, Jie, et al.
(författare)
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Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
- 2011
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Ingår i: Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. - : AIP. - 0094-243X .- 1551-7616. ; 1399, s. 285-286
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Konferensbidrag (refereegranskat)abstract
- Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.
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| 7. |
- Sun, Jie, et al.
(författare)
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Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
- 2009
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Ingår i: 2009 IEEE Nanotechnology Materials and Devices Conference. ; , s. 183-185
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Konferensbidrag (refereegranskat)abstract
- Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
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| 8. |
- Sun, Jie, et al.
(författare)
-
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- 2009
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:4
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Tidskriftsartikel (refereegranskat)abstract
- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
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| 9. |
- Sun, Jie, et al.
(författare)
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Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
- 2011
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 32:2, s. 131-133
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
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| 10. |
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