| 1. |
- Lu, P. F., et al.
(författare)
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Quasiparticle and optical properties of strained stanene and stanane
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1, s. 8-
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Tidskriftsartikel (refereegranskat)abstract
- Quasiparticle band structures and optical properties of two dimensional stanene and stanane (fully hydrogenated stanene) are studied by the GW and GW plus Bethe-Salpeter equation (GW-BSE) approaches, with inclusion of the spin-orbit coupling (SOC). The SOC effect is significant for the electronic and optical properties in both stanene and stanane, compared with their group IV-enes and IV-anes counterparts. Stanene is a semiconductor with a quasiparticle band gap of 0.10 eV. Stanane has a sizable band gap of 1.63 eV and strongly binding exciton with binding energy of 0.10 eV. Under strain, the quasiparticle band gap and optical spectrum of both stanene and stanane are tunable.
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| 2. |
- Wu, L., et al.
(författare)
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Structural and electronic properties of two-dimensional stanene and graphene heterostructure
- 2016
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Ingår i: Nanoscale Research Letters. - : Springer Science and Business Media LLC. - 1556-276X .- 1931-7573. ; 11:1, Artikel nr: 525
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Tidskriftsartikel (refereegranskat)abstract
- Structural and electronic properties of two-dimensional stanene and graphene heterostructure (Sn/G) are studied by using first-principles calculations. Various supercell models are constructed in order to reduce the strain induced by the lattice mismatch. The results show that stanene interacts overall weakly with graphene via van der Waals (vdW) interactions. Multiple phases of different crystalline orientation of stanene and graphene could coexist at room temperature. Moreover, interlayer interactions in stanene and graphene heterostructure can induce tunable band gaps at stanene’s Dirac point, and weak p-type and n-type doping of stanene and graphene, respectively, generating a small amount of electron transfer from stanene to graphene. Interestingly, for model Sn(7)/G(5), there emerges a band gap about 34 meV overall the band structure, indicating it shows semiconductor feature.
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