| 1. |
- Karandikar, Yogesh, 1982, et al.
(författare)
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A compact 340 GHz 2x4 patch array with integrated subharmonic gilber core mixer as a building block for multi-pixel imaging frontends
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- For linear multi-pixel imaging systems, a linear stack of pixels comprising of an antenna and a heterodyne receiver are needed. Such pixels can be realized using MMIC processes. The main constraint for such multi-pixel system is a compact array of pixels giving high coupling to quasi-optics used for focusing. This paper addresses this trade-off and presents a novel solution based on beam synthesis of two consecutive subarrays. One such sub-array along with heterodyne receiver is described as half-pixel in this paper and it is realized using 2x4 patch array and Gilbert core sub-harmonic mixer using a 250nm DHBT process. The patch array has ohmic loss better than 8 dB and mixer conversion loss is 6-8 dB over 320-350 GHz RF band. The chip size is 1mm x 2mm and therefore for 7 simultaneous beams a MMIC of 8 half-pixels is foreseen.
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| 2. |
- Karandikar, Yogesh, 1982, et al.
(författare)
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Compact integration of sub-harmonic resistive mixer with differential double slot antenna in G-band using 50nm InP-HEMT MMIC process
- 2012
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Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
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Konferensbidrag (refereegranskat)abstract
- Sub-Harmonic resistive HEMT based mixers in Gband have been designed and integrated with Double Slot Antenna in Differential Configuration for the first time. This novel topology shows compact integration of active devices between antenna ports while achieving 25 GHz bandwidth around 200 GHz. The dual-gate 50nm x 15um InP HEMT used in the design achieves the conversion loss of 15 dB with +3 dBm LO power drive. Furthermore, a similar topology when used as a Harmonic mixer using a single gate device offers 16.5 dB conversion loss for +4 dBm LO power. For compact integration, via hole matching on slot antenna is also presented.
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| 3. |
- Persson, Mikael, 1959, et al.
(författare)
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Microwave based diagnostics and treatment in practice
- 2013
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Ingår i: 2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2013 - Proceedings.
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Konferensbidrag (refereegranskat)abstract
- Globally, around 15 million people each year suffer a stroke. Only a small fraction of stroke patients who could benefit from thrombolytic treatment reach diagnosis and treatment in time. To increase this low figure we have developed microwave technology aiming to differentiate hemorrhagic from ischemic stroke patients. The standard method for breast cancer diagnosis today is X-ray mammography. Despite its recognized ability to detect tumors it suffers from some limitations. Neither the false positive nor the false negative detection rates are negligible. An interesting alternative being researched extensively today is microwave tomography. In our current strive to develop a clinical prototype we have found that the most suitable design consists of an antenna array placed in a full 3D pattern. During the last decade clinical studies have demonstrated the ability of microwave hyperthermia to dramatically enhance cancer patient survival. The fundamental challenge is to adequately heat deep-seated tumors while preventing surrounding healthy tissue from undesired heating and damage. We are specifically addressing the challenge to deliver power levels with spatial control, patient treatment planning, and noninvasive temperature measurements. © 2013 IEEE.
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| 4. |
- Shiu, Jin-Yu, 1978, et al.
(författare)
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Comparison of the DC and microwave performance of AlGaN/GaN HEMTs with sputter PVD or plasma enhanced CVD grown silicon nitride (SiNx) passivation layer
- 2006
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Ingår i: WOCSDICE 2006 Proceedings, Fiskebäckskil 2006.
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Konferensbidrag (refereegranskat)abstract
- Sputter and plasma enhanced chemical vapor deposition (PECVD) processed SiNx passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs) was compared in this investigation. The both samples were process on the same wafer and the same process besides the passivation process in the same batch. From the data of DC, mimicked class B quiescent bias point pulse measurement, transient pulse measurement are showing that the sputter passivation HEMTs have better performance because there are fewer surface traps. The power sweep data from load pull measurement were in accordance with the pulsed measurement data. Without cooling, continuous wave power densities of 4W/mm and 3.1W/mm was measured at 3GHz on the sputter and PECVD passivation HEMTs, respectively.
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| 5. |
- Strömbeck, Frida, 1990, et al.
(författare)
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A 40 Gbps QAM-16 communication link using a 130 nm SiGe BiCMOS process
- 2022
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2022-June, s. 1013-1016
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Konferensbidrag (refereegranskat)abstract
- In this work a high data rate transmitter and receiver link is presented using a 130 nm SiGe BiCMOS process. The communication link has demonstrated transmissions up to 40 Gbps QAM-16 at D-band (110-170 GHz) over a one meter polymer microwave fiber (PMF). The peak output power of the transmitter (Tx) is 3 dBm at 135 GHz and the 3-dB bandwidth of both Tx and receiver (Rx) is between 115 - 145 GHz, resulting in a 30 GHz bandwidth. Total chip area for Tx and Rx combined, including pads, is 4.2 mm2.
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| 6. |
- Strömbeck, Frida, 1990, et al.
(författare)
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An 80 Gbps QAM-16 PMF Link Using a 130 nm SiGe BiCMOS Process
- 2023
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 443-445
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Konferensbidrag (refereegranskat)abstract
- In this work a D-band (110 GHz - 170 GHz) polymer microwave fiber (PMF) link for high data rate communication is presented. The transmitter (Tx) and receiver (Rx) circuits are designed and fabricated in a commercial 130 nm silicon germanium (SiGe) BiCMOS process. The Tx has a peak output power of 5 dBm. The link has been tested over a 2 meter long PMF, demonstrating 80 Gbps using QAM-16 modulation, with a bit error rate (BER) of 8*10 −4 , and 48 Gbps using QPSK with a BER < 10 −12 . For a 4 meter long PMF, 24 Gbps using QPSK was demonstrated with a BER =7.7*10 −6.
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| 7. |
- Vassilev, Vessen, 1969, et al.
(författare)
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Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission
- 2018
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781538650677 ; , s. 1523-1526
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Konferensbidrag (refereegranskat)abstract
- This manuscript presents results of wireless real-time data transmission at 143 GHz. The transmitter/receiver (Tx/Rx) front-end circuitry is integrated on a single monolithic microwave integrated circuits (MMICs), realized in a 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The Tx module shows gain of 12 dB at 143 GHz with output power of -2.3 dBm at 1 dB gain compression. The Rx module has a gain of 15 dB with noise figure (NF) of 13 dB at 143 GHz. The minimum NF of 10 dB is measured at 132 GHz. The Tx/Rx front-end modules were integrated in two radio units to demonstrate a real time wireless data transmission. At a distance of 10 m and using 40 dBi gain antennas, the highest data rate achieved was 5.3 Gbit/s using 64 QAM modulation over a 1 GHz channel with spectrum efficiency of 5bit/s/Hz.
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| 8. |
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| 9. |
- Yan, Yu, 1984, et al.
(författare)
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A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
- 2018
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 10800
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Konferensbidrag (refereegranskat)abstract
- A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.
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| 10. |
- Yang, Songyuan, et al.
(författare)
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A Terahertz-wave Double-Band Transition from Substrate Integrated Waveguide to Rectangular Waveguide for InP MMIC
- 2018
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Ingår i: Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018. ; , s. 140-141
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Konferensbidrag (refereegranskat)abstract
- A double-band terahertz slot transition from the substrate integrated waveguide (SIW) to the rectangular waveguide (RWG) is presented. With better than 10 dB return loss (RL) and 1.3 dB insertion loss (IL) demonstrated by full-EM simulation, the frequency bands of a designed sample are from 164.6 GHz to 182.76 GHz and from 238 GHz to 257.9 GHz. The presented transition is suitable for multilayer MMIC process, especially for the substrate with high loss and high dielectric constant.
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