| 1. |
- Jung, W., et al.
(författare)
-
Electron eigen states in quantum dots revealed by temperature derivative capacitance spectroscopy
- 2010
-
Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - 9781424435449 ; , s. 702-703
-
Konferensbidrag (refereegranskat)abstract
- A novel method is presented for detecting confined energy states of quantum dots embedded in junction space charge regions. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states. To confirm the reliability of the method, experimental data are compared with the admittance based methods and theory used earlier for interpretation of experimental data. ©2010 IEEE.
|
|
| 2. |
- Jung, W., et al.
(författare)
-
Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy
- 2011
-
Ingår i: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880. ; 11:12, s. 1-10492
-
Tidskriftsartikel (refereegranskat)abstract
- A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Kaniewska, M., et al.
(författare)
-
Hole emission mechanism in Ge/Si quantum dots
- 2011
-
Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 8:2, s. 411 -413
-
Tidskriftsartikel (refereegranskat)abstract
- The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected.
|
|
| 6. |
- Kaniewska, M., et al.
(författare)
-
Spatial variarion of hole eigen energies in Ge/Si quantum wells
- 2011
-
Ingår i: AIP Conference Proceedings. - : AIP. - 1551-7616 .- 0094-243X. - 9780735410022 ; 1399, s. 293-294
-
Konferensbidrag (refereegranskat)abstract
- Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
|
|
| 7. |
|
|
| 8. |
|
|
| 9. |
|
|
| 10. |
|
|
