| 1. |
- Li, Junjie, et al.
(författare)
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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
- 2020
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Ingår i: Materials. - : MDPI AG. - 1996-1944 .- 1996-1944. ; 13:3
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
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| 2. |
- Huo, Hong-wei, et al.
(författare)
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Coexistence of 2.4 GHz sensor networks in home environment
- 2010
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Ingår i: The Journal of China Universities of Posts and Telecommunications. - : Elsevier. - 1005-8885. ; 17:1, s. 9-18
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Tidskriftsartikel (refereegranskat)abstract
- The IEEE 802.15.4 is one of the low-layer communication standards for personal area networks (PANs) and wireless sensor networks (WSNs), which may be interfered by other wireless devices in the industrial, scientific and medical (ISM) frequency bands, especially in home environment, such as devices of IEEE 802.11b, Bluetooth, cordless telephone, and microwave oven radiation. This article examines the mutual interference effects of 2.4 GHz devices widely deployed at home, via both theoretical analysis and real-life experiment. An analytical model is proposed to estimate the packet error rate (PER) of radio frequency (RF) coexistent networks. The model is verified through a series of experiments. The experimental results also show that Bluetooth has little impact of interference on IEEE 802.15.4 sensor networks, and that the effect of microwave oven radiation on IEEE 802.15.4 sensor devices is tolerable if the device is a few meters away from the oven. Whereas, IEEE 802.11b wireless networks can cause problems to IEEE 802.15.4, however the effects can be significantly reduced by a proper channel selection. This article also proposes the interference duration model, which will be helpful in modeling of coexistence simulation. Simulation results show that the stationary scenario obeys the experiments result very well.
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| 3. |
- Lixing, Zhou, et al.
(författare)
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Understanding dipole formation at dielectric/dielectric hetero-interface
- 2018
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 113:18
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Tidskriftsartikel (refereegranskat)abstract
- Band alignment and dipole formation at the hetero-interface still remain fascinating and, hence, are being intensively investigated. In this study, we experimentally investigate the dipole formation by employing a dielectric/dielectric (Al2O3/GeO2) interface. We investigate the dipole dependence on various post-deposition annealing (PDA) ambiences from the viewpoints of electrical extraction and the X-ray photoelectron spectroscopy measurement. The core level shift at the Al2O3/GeO2 interface is consistent with the dipole changes in various PDA ambiences. We discover that the dipole formation can be well explained by the interface gap state and charge neutrality level theory. These results further confirm the feasibility of gap state theory in explaining the band alignment at hetero-junctions. This study can be a booster to enhance the comprehension of dipole origin at hetero-junction interfaces.
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| 4. |
- Radamson, Henry H., et al.
(författare)
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Miniaturization of CMOS
- 2019
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Ingår i: Micromachines. - : MDPI AG. - 2072-666X. ; 10:5
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Tidskriftsartikel (refereegranskat)abstract
- When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.
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