SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Zhang SL) ;lar1:(kth)"

Sökning: WFRF:(Zhang SL) > Kungliga Tekniska Högskolan

  • Resultat 1-3 av 3
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Schael, S, et al. (författare)
  • Precision electroweak measurements on the Z resonance
  • 2006
  • Ingår i: Physics Reports. - : Elsevier BV. - 0370-1573 .- 1873-6270. ; 427:5-6, s. 257-454
  • Forskningsöversikt (refereegranskat)abstract
    • We report on the final electroweak measurements performed with data taken at the Z resonance by the experiments operating at the electron-positron colliders SLC and LEP. The data consist of 17 million Z decays accumulated by the ALEPH, DELPHI, L3 and OPAL experiments at LEP, and 600 thousand Z decays by the SLID experiment using a polarised beam at SLC. The measurements include cross-sections, forward-backward asymmetries and polarised asymmetries. The mass and width of the Z boson, m(Z) and Gamma(Z), and its couplings to fermions, for example the p parameter and the effective electroweak mixing angle for leptons, are precisely measured: m(Z) = 91.1875 +/- 0.0021 GeV, Gamma(Z) = 2.4952 +/- 0.0023 GeV, rho(l) = 1.0050 +/- 0.0010, sin(2)theta(eff)(lept) = 0.23153 +/- 0.00016. The number of light neutrino species is determined to be 2.9840 +/- 0.0082, in agreement with the three observed generations of fundamental fermions. The results are compared to the predictions of the Standard Model (SM). At the Z-pole, electroweak radiative corrections beyond the running of the QED and QCD coupling constants are observed with a significance of five standard deviations, and in agreement with the Standard Model. Of the many Z-pole measurements, the forward-backward asymmetry in b-quark production shows the largest difference with respect to its SM expectation, at the level of 2.8 standard deviations. Through radiative corrections evaluated in the framework of the Standard Model, the Z-pole data are also used to predict the mass of the top quark, m(t) = 173(+10)(+13) GeV, and the mass of the W boson, m(W) = 80.363 +/- 0.032 GeV. These indirect constraints are compared to the direct measurements, providing a stringent test of the SM. Using in addition the direct measurements of m(t) and m(W), the mass of the as yet unobserved SM Higgs boson is predicted with a relative uncertainty of about 50% and found to be less than 285 GeV at 95% confidence level. (c) 2006 Elsevier B.V. All rights reserved.
  •  
2.
  • Zhang, Zhibin, et al. (författare)
  • Dielectrophoretic behavior of ionic surfactant-solubilized carbon nanotubes
  • 2006
  • Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614 .- 1873-4448. ; 421:1-3, s. 11-15
  • Tidskriftsartikel (refereegranskat)abstract
    • The deposition of carbon nanotubes (CNTs), suspended in aqueous sodium dodecylbenzene sulfonate (SDBS) solution, to predefined microelectrodes using alternating current dielectrophoresis is found to strongly depend on the frequency and SDBS concentration. The deposition rate of CNTs increases with increasing frequency. At high SDBS concentrations, the alignment of CNTs between electrode pairs is only achievable at high frequencies above 1 MHz. The morphology of the deposited CNTs relative to the electrodes varies with the SDBS concentration. The experimental observations are discussed by treating the CNTs as a rigid rod.
  •  
3.
  • Wu, Donping, et al. (författare)
  • Influence of surface treatment prior to ALD high-kappa dielectrics on the performance of SiGe surface-channel pMOSFETs
  • 2004
  • Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 25:5, s. 289-291
  • Tidskriftsartikel (refereegranskat)abstract
    • Compressively strained Si0.7Ge0.3 surface-channel pMOSFETs with atomic layer deposition (ALD) Al2O3/HfO2/Al2O3 nanolaminate and low-pressure chemical vapor deposition p(+) poly-SiGe gate electrode were fabricated. Surface treatment with either hydrogen fluoride (HF) clean, or HF clean followed by water rinse was performed prior to the ALD processing. The devices with water rinse show a good control of interfacial layer and device reproducibility, while the devices without water rinse lack a clearly observable interfacial layer and show scattered electrical characteristics and distorted mobility curve. A similar to20% increase in hole mobility compared to the Si universal mobility and a similar to0.6-nm-thick continuous interfacial layer are obtained for the pMOSFETs with water rinse.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-3 av 3

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy