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- Zhang, YW, et al.
(författare)
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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formation of thin silicide surface films
- 1999
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Ingår i: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - : ELSEVIER SCIENCE BV. - 0168-583X. ; 159:3, s. 142-157
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 With different thickness, have been implanted by Co to normal fluences from 1x10(16) to 2.6x10(18) ions cm(-2). The Co ions were produced by a high beam curren
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