| 1. |
- Zhang, Guojie, et al.
(author)
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Comparative genomics reveals insights into avian genome evolution and adaptation
- 2014
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In: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 346:6215, s. 1311-1320
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Journal article (peer-reviewed)abstract
- Birds are the most species-rich class of tetrapod vertebrates and have wide relevance across many research fields. We explored bird macroevolution using full genomes from 48 avian species representing all major extant clades. The avian genome is principally characterized by its constrained size, which predominantly arose because of lineage-specific erosion of repetitive elements, large segmental deletions, and gene loss. Avian genomes furthermore show a remarkably high degree of evolutionary stasis at the levels of nucleotide sequence, gene synteny, and chromosomal structure. Despite this pattern of conservation, we detected many non-neutral evolutionary changes in protein-coding genes and noncoding regions. These analyses reveal that pan-avian genomic diversity covaries with adaptations to different lifestyles and convergent evolution of traits.
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| 2. |
- Liang, Jie, et al.
(author)
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CHA-type zeolites with high boron content : Synthesis, structure and selective adsorption properties
- 2014
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In: Microporous and Mesoporous Materials. - : Elsevier BV. - 1387-1811 .- 1873-3093. ; 194, s. 97-105
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Journal article (peer-reviewed)abstract
- Borosilicate zeolites with CHA-type framework are synthesized hydrothermally by using N,N,N-trimethylcyclohexylammonium hydroxide as structure directing agent. The use of this cation induces an increase of boron content in the CHA-type zeolites, and the Si/B ratios of the as-synthesized samples is in the range of 11.8-6.9. Rietveld refinements of the calcinated samples reveal a contraction of unit cells with the increase of boron content, and the 8-ring opening window of cha cavity becomes narrower. B-11 MAS NMR shows that all the boron atoms are incorporated into the framework as tetrahedral BO4 units in the as-synthesized samples. The thermal stability of these CHA-type borosilicates decreases with the increase of boron content, and the framework can retain up to 800 degrees C. These borosilicates, with the BET surfaces of 583-632 m(2)/g, show a high adsorption capacity for H-2 at 77 K, 900 mmHg and a preferential adsorption for CO2 at 273 K. This selective adsorption property enables CHA-type borosilicates to be potential materials as CO2 adsorbent.
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| 3. |
- Xu, K., et al.
(author)
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GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition
- 2013
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:22, s. 5-
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Journal article (peer-reviewed)abstract
- Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.
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| 4. |
- Xu, K., et al.
(author)
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Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes
- 2013
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:16
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Journal article (peer-reviewed)abstract
- By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system. Despite being highly polycrystalline, it is as conductive and transparent as standard graphene and can be used in light emitting diodes as transparent electrodes. 7-10 nm indium tin oxide (ITO) contact layer is inserted between the graphene and p-GaN to enhance hole injection. Devices with forward voltage and transparency comparable to those using traditional 240 nm ITO are achieved with better ultraviolet performances, hinting the promising future for application-oriented graphene by rapid CVD.
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