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| 2. |
- Piao, Yinghua, et al.
(författare)
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An extensive Raman spectroscopic investigation of ultrathin Co1-xNixSi2 films grown on Si(100)
- 2012
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 30:4, s. 041511-041518
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin silicide films were formed by starting from 1-8 nm thick Co1-xNix (x = 0, 0.25, 0.5, 0.75, and 1) at 350 degrees C-900 degrees C. For each composition x, there exists a critical thickness above which the transition temperature from monosilicides CoSi and NiSi to a disilicide-like phase increases with increasing film thickness. Below this thickness, the disilicide phase seems to form without exhibiting the monosilicides within the detection resolution limits of transmission electron microscopy and Raman spectroscopy. Raman spectroscopic analysis seems to indicate that Ni could be dissolved in the CoSi lattice to a certain fraction despite the fact that CoSi and NiSi are distinct with different crystallographic structures. Moreover, the disorder-induced Raman scattering in NiSi2 is found to be enhanced by Co incorporation. The observed annealing behaviors are attributed to variations in free energy change for phase transition caused by differences in metal thickness.
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| 3. |
- Zhang, Zhen, et al.
(författare)
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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:25, s. 252108-
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on a process scheme to obtain highly reproducible Ni1−xPtx silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.
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| 4. |
- Zhang, Zhen, et al.
(författare)
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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:7, s. 071915-
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Tidskriftsartikel (refereegranskat)abstract
- This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 °C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime.
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| 5. |
- Zhu, Zhiwei, et al.
(författare)
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Conformal Ni-silicide formation over three-dimensional device structures
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:5, s. 053508-
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.
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